2SK2212
Silicon N Channel MOS FET
REJ03G1003-0200
(Previous: ADE-208-1351)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2212
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
200
±20
10
40
10
30
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
200
±20
20
—
—
2.0
—
3.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.24
6
1000
360
65
18
80
65
50
1.1
190
Max
—
—
±10
250
4.0
0.3
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V*
1
I
D
= 5 A, V
DS
= 10 V*
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2212
Main Characteristics
Power vs. Temperature Derating
40
50
10
Maximum Safe Operation Area
10
PW
D
C
Channel Dissipation Pch (W)
µ
s
20
0
Drain Current I
D
(A)
30
10
5
2
1
0.5
0.2
0.1
0.05
Ta = 25°C
2
5
µ
s
=
1
10
n
m
s
s
(1
sh
ot
25
°
C
m
20
Operation in
this area is
limited by R
DS(on)
tio
ra
pe
O
)
c
(T
=
)
10
0
50
100
150
200
0.5 1
10 20
50 100 200 500
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
10
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
Drain Current I
D
(A)
16
6V
8
5.5 V
5V
4.5 V
V
GS
= 3.5 V
6
Tc = 75°C
4
25°C
–25°C
8
4
2
4V
16
20
0
2
4
6
8
10
0
4
8
12
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
Drain to Source Saturation Voltage V
DS (on)
(V)
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
V
GS
= 10 V
3
I
D
= 10 A
2
5A
1
2A
0
4
8
12
16
20
0.2
0.1
0.5
15 V
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2212
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
1.0
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
10
5
Tc = –25°C
25°C
75°C
2
1
0.5
V
DS
= 10 V
Pulse Test
0.8
0.6
I
D
= 10 A
0.4
2A
0.2
0
–40
5A
0.2
0.1
0.1
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
5000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
100
50
Capacitance C (pF)
200
1000
Ciss
Coss
100
20
10
5
0.2
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10
20
10
5
V
GS
= 0
f = 1 MHz
Crss
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
Switching Characteristics
20
500
Gate to Source Voltage V
GS
(V)
V
GS
Switching Time t (ns)
400
V
DD
= 50 V
100 V
150 V
16
200
100
50
tr
td(off)
tf
td(on)
300
12
I
D
= 15 A
V
DS
V
DD
= 150 V
100 V
50 V
200
8
20
10
5
0.2
100
4
0
40
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
8
16
24
32
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2212
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
V
GS
= 0, –5 V
8
10 V
5V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
S
(t)
3
Tc = 25°C
25
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17°C/W, Tc = 25°C
4.17
PDM
PW
T
0.03
0.01
10 µ
0.02
1
lse
0.0
pu
t
ho
1s
D=
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= 30 V
Vout
Monitor
Vin
Vout
Vin
10 V
50
Ω
10%
10%
Waveforms
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
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