2SK2426
Silicon N Channel MOS FET
REJ03G1013-0200
(Previous: ADE-208-1361)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter.
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
G
1. Gate
2. Drain
3. Source
12
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2426
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
250
±30
12
48
12
35
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
30
—
—
2.0
—
5.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.23
8.0
1100
440
68
20
65
100
44
1.0
200
Max
—
—
±10
250
3.0
0.35
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 250 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A, V
GS
= 10 V*
3
I
D
= 6 A, V
DS
= 10 V*
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 6 A, V
GS
= 10 V,
R
L
= 5
Ω
I
F
= 12 A, V
GS
= 0
I
F
= 12 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2426
Main Characteristics
Power vs. Temperature Derating
60
100
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
10
C
D
10
PW
=
1
µ
s
0
40
10
m
µ
s
s
m
3
1
s
(1
r
pe
O
at
n
io
sh
20
ot
)
c
(T
Ta = 25°C
0
50
100
150
0.3 Operation in this area
is limited by R
DS(on)
0.1
1
3
10
30
=
°
25
)
C
100 300
1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
6V
10
Pulse Test
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
16
5.5 V
8
V
DS
= 10 V
Pulse Test
12
5V
8
4.5 V
4
V
GS
= 4 V
0
4
8
12
16
20
6
Tc = 75°C
4
25°C
– 25°C
2
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
3
10 A
2
5A
1
I
D
= 2 A
0
4
8
12
16
20
V
GS
= 10 V
0.2
15 V
0.1
0.05
0.5
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2426
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
V
GS
= 10 V
I
D
= 10 A
5A
2A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 10 V
Pulse Test
Tc = –25°C
0.8
20
10
5
0.6
0.4
75°C
25°C
2
1
0.5
0.1
0.2
0.5
1
2
5
10
0.2
0
– 40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10000
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time t rr (ns)
Capacitance C (pF)
200
100
50
1000
Ciss
Coss
100
Crss
20
10
5
0.2
0.5
1
2
5
10
20
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
I
D
= 12 A
20
Switching Characteristics
Gate to Source Voltage V
GS
(V)
500
200
100
50
t
r
20
10
5
0.1 0.2
t
f
t
d (on)
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty
≤
1 %
t
d (off)
300
V
DS
V
GS
12
200
V
DD
= 200 V
100 V
8
50 V
V
DD
= 200 V
100 V
50 V
4
100
0
0
8
16
24
32
40
0
Switching Time t (ns)
400
16
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2426
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
8
4
V
GS
= 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t)
• θ
ch – c
θ
ch – c = 3.57°C/W, Tc = 25°C
PDM
PW
T
D=
0.03
0.01
10
µ
0.02
1
lse
0.0
pu
t
ho
1s
PW
T
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (S)
Rev.2.00 Sep 07, 2005 page 5 of 6
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