2SK2569ZN-TR-E datasheet, PDF - EEWORLD Datasheet

2SK2569ZN-TR-E: DescriptionSilicon N Channel MOS FET; CategoryDiscrete semiconductor The transistor; File Size94KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SK2569ZN-TR-E Overview

Silicon N Channel MOS FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SC-59A
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.2 A
Maximum drain current (ID)	0.2 A
Maximum drain-source on-resistance	2.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	20
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2SK2569

Silicon N Channel MOS FET

REJ03G1018-0300

Rev.3.00

Dec 27, 2006

Application

High speed power switching

Features

•

Low on-resistance.

DS(on)

= 2.6

Ω

max. (at V

= 4 V, I

= 100 mA)

2.5 V gate drive device.

Small package (MPAK).

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note:

Marking is "ZN–"

Rev.3.00 Dec 27, 2006 page 1 of 6

	2SK2569ZN-TR-E	2SK2569	2SK2569ZN-TL-E
Description	Silicon N Channel MOS FET	Silicon N Channel MOS FET	Silicon N Channel MOS FET
Contacts	3	3	3
Reach Compliance Code	unknow	compli	unknow
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	Single	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (Abs) (ID)	0.2 A	0.2 A	0.2 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W	150 W	0.15 W
surface mount	YES	YES	YES
Base Number Matches	1	1	1
Is it Rohs certified?	conform to	-	conform to
Parts packaging code	SC-59A	-	SC-59A
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Minimum drain-source breakdown voltage	50 V	-	50 V
Maximum drain current (ID)	0.2 A	-	0.2 A
Maximum drain-source on-resistance	2.6 Ω	-	2.6 Ω
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
Number of components	1	-	1
Number of terminals	3	-	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	NOT SPECIFIED
Certification status	Not Qualified	-	Not Qualified
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	20	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON

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