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2SK2925

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size87KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SK2925 Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1039-0500
(Previous: ADE-208-454B)
Rev.5.00
Sep 07, 2005
Features
Low on-resistance
R
DS
= 0.060
typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
G
1
2
3
D
1. Gate
2. Drain
3. Source
4. Drain
1
2 3
S
Rev.5.00 Sep 07, 2005 page 1 of 8

2SK2925 Related Products

2SK2925 2SK2925L 2SK2925L-E 2SK2925S
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Is it Rohs certified? - incompatible conform to incompatible
package instruction - IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts - 3 4 3
Reach Compliance Code - compli compli compli
ECCN code - EAR99 EAR99 EAR99
Shell connection - DRAIN DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 60 V 60 V 60 V
Maximum drain current (ID) - 10 A 10 A 10 A
Maximum drain-source on-resistance - 0.16 Ω 0.16 Ω 0.16 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code - e0 e6 e0
Number of components - 1 1 1
Number of terminals - 3 3 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - IN-LINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 40 A 40 A 40 A
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - NO NO YES
Terminal surface - TIN LEAD TIN BISMUTH TIN LEAD
Terminal form - THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Base Number Matches - 1 1 1
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