HB56SW864ESN-6 datasheet, PDF - EEWORLD Datasheet

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HB56SW864ESN-6: DescriptionEDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168; Categorystorage storage; File Size432KB，32 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56SW864ESN-6 Overview

EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168

HB56SW864ESN-6 Parametric

Parameter Name	Attribute value
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	536870912 bit
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
Maximum standby current	0.032 A
Maximum slew rate	1.36 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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HB56SW872ESN Series,

HB56SW864ESN Series

8,388,608-word

72-bit High Density Dynamic RAM Module

8,388,608-word

64-bit High Density Dynamic RAM Module

ADE-203-761A (Z)

Rev. 1.0

Mar. 28, 1997

Description

The HB56SW872ESN, HB56SW864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

The HB56SW872ESN is a 8M

72 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM

(HM51W16405) sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect

(PD). The HB56SW864ESN is a 8M

64 dynamic RAM module, mounted 32 pieces of 16-Mbit DRAM

(HM51W16405) sealed in TCP package and 1 pieces of serial EEPROM (24C02) for Presence Detect

(PD). The HB56SW872ESN, HB56SW864ESN offer Extended Data Out (EDO) Page Mode as a high

speed access mode. An outline of the HB56SW872ESN, HB56SW864ESN is 168-pin socket type package

(dual lead out). Therefore, the HB56SW872ESN, HB56SW864ESN make high density mounting possible

without surface mount technology. The HB56SW872ESN, HB56SW864ESN provide common data inputs

and outputs. Decoupling capacitors are mounted beneath each TCP on the module board.

Features

•

168-pin socket type package (Dual lead out)



Lead pitch: 1.27 mm

•

Single 3.3 V (+0.3 V/ –0.15 V) supply

•

JEDEC standard outline unbufferd 8 byte DIMM

•

High speed



Access time: t

RAC

= 60/70 ns (max)

CAC

= 15/18 ns (max)

•

Low power dissipation



Active mode: 5.51/4.86 W (max) (HB56SW872ESN)

4.90/4.32 W (max) (HB56SW864ESN)



Standby mode (TTL): 259 mW (max) (HB56SW872ESN)

(TTL): 230 mW (max) (HB56SW864ESN)

(CMOS): 130 mW (max) (HB56SW872ESN)

(CMOS): 115 mW (max) (HB56SW864ESN)

HB56SW864ESN-6 Related Products

	HB56SW864ESN-6	HB56SW872ESN-6	HB56SW864ESN-7	HB56SW872ESN-7
Description	EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168	EDO DRAM Module, 8MX72, 60ns, CMOS, DIMM-168	EDO DRAM Module, 8MX64, 70ns, CMOS, DIMM-168	EDO DRAM Module, 8MX72, 70ns, CMOS, DIMM-168
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	60 ns	70 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH	RAS ONLY/CAS BEFORE RAS REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	536870912 bit	603979776 bit	536870912 bit	603979776 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	72	64	72
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	8MX64	8MX72	8MX64	8MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm
Maximum standby current	0.032 A	0.036 A	0.032 A	0.036 A
Maximum slew rate	1.36 mA	1.53 mA	1.2 mA	1.35 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maker	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）

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