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2SK1968-E

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK1968-E Overview

Silicon N Channel MOS FET

2SK1968-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-3P
package instructionSC-65, TO-3P, 3 PIN
Contacts4
Manufacturer packaging codePRSS0004ZE-A4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.88 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1968
Silicon N Channel MOS FET
REJ03G0989-0200
(Previous: ADE-208-1337)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
No secondary breakdown
Suitable for switching regulator
Low drive current
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6

2SK1968-E Related Products

2SK1968-E 2SK1968
Description Silicon N Channel MOS FET Silicon N Channel MOS FET
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Parts packaging code TO-3P TO-3P
package instruction SC-65, TO-3P, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 4 3
Reach Compliance Code compli compli
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 12 A 12 A
Maximum drain current (ID) 12 A 12 A
Maximum drain-source on-resistance 0.88 Ω 0.88 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e2 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
Maximum pulsed drain current (IDM) 48 A 48 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Copper (Sn/Cu) TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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