2SK1968
Silicon N Channel MOS FET
REJ03G0989-0200
(Previous: ADE-208-1337)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
No secondary breakdown
Suitable for switching regulator
Low drive current
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1968
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
600
±30
12
48
12
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
600
±30
—
—
2.0
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.68
10
1800
400
60
25
70
145
65
1.1
670
Max
—
—
±10
250
3.0
0.88
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A, V
GS
= 10 V*
I
D
= 6 A, V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 6 A, V
GS
= 10 V,
R
L
= 5
Ω
3
3
I
F
= 12 A, V
GS
= 0
I
F
= 12 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1968
Main Characteristics
Power vs. Temperature Derating
200
100
30
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
150
Drain Current I
D
(A)
100
50
1m
DC
PW
s
Op
= 1
er
0 m
at
3
ion
s(1
(T
sho
c =
t)
in this
1
Operationby R area
25
is limited
DS(on)
°
C
)
s
10
0
µ
s
10
µ
0.3
0.1
5
Ta = 25°C
10
30
100
300
1000
0
50
100
150
200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
Pulse test
20
Typical Transfer Characteristics
Pulse test
V
DS
= 20 V
Drain Current I
D
(A)
12
4.5 V
8
Drain Current I
D
(A)
16
6V
5V
16
12
Tc = 75°C
8
25°C
–25°C
4
4
V
GS
= 4 V
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
20
Pulse test
16
15 A
12
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
V
GS
= 10 V
8
10 A
I
D
=5A
4
0.2
Pulse test
0.1
1
2
5
10
20
50
100
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1968
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse test
V
GS
= 10 V
1.6
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
Pulse test
V
DS
= 20 V
20
10
5
Tc = –25°C
25°C
75°C
1.2
10 A
0.8
I
D
= 5 A
2
1
0.5
0.1 0.2
0.4
0
–40
0
40
80
120
160
0.5
1
2
5
10
20
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
3000
5000
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
2000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
2000
Ciss
Capacitance C (pF)
1000
500
200
100
50
20
Crss
10
20
30
40
50
V
GS
= 0
f = 1 MHz
Coss
1000
500
200
100
0.1 0.2
0.5
1
2
5
10
20
10
0
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 12 A
V
DD
= 100 V
250 V
400 V
V
GS
16
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
300
200
t
d(off)
1000
Switching Time t (ns)
800
100
t
f
t
r
20
10
0.1 0.2
V
GS
= 10 V, PW = 5
µs
duty 1 %, V
DD
30 V
0.5
1
2
5
10
20
600
V
DS
12
50
400
8
V
DD
= 400 V
250 V
100 V
20
40
60
80
t
d(on)
200
4
0
100
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1968
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse test
16
12
V
GS
= 0, –5 V
10 V
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
1
0.3
0.2
0.1
0.1
0.05
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 1.25°C/W, Tc = 25°C
P DM
0.02
D=
PW
T
0.03
0.01
10
µ
0.01
1
tP
sho
uls
e
PW
T
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
90%
Vin Monitor
D.U.T.
R
L
Vout
Monitor
Vin
Vout
10%
10%
10%
Vin
10 V
50
Ω
V
DD
= 30 V
90%
t d(on)
t
r
90%
t d(off)
t
f
Rev.2.00 Sep 07, 2005 page 5 of 6
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