3SK296
Silicon N-Channel Dual Gate MOS FET
REJ03G0815-0300
(Previous ADE-208-388A)
Rev.3.00
Aug.10.2005
Application
UHF RF amplifier
Features
•
Low noise figure.
NF = 2.0 dB Typ. at f = 900 MHz
•
Capable of low voltage operation
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK–4)
2
3
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZQ–”
Attention:
This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Rev.3.00 Aug 10, 2005 page 1 of 7
3SK296
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate 1 to source breakdown voltage
Gate 2 to source breakdown voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage
Gate 2 to source cutoff voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
I
DS(on)
V
G1S(off)
V
G2S(off)
|y
fs
|
Ciss
Coss
Crss
PG
NF
Min
12
±8
±8
—
—
0.5
–0.5
0
16
1.2
0.6
—
16
—
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
Max
—
—
—
±100
±100
10
+0.5
+1.0
—
2.2
1.2
0.03
—
3
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200
µA
, V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
= ±10
µA,
V
G2S
= V
DS
= 0
I
G2
= ±10
µA,
V
G1S
= V
DS
= 0
V
G1S
= ±6 V, V
G2S
= V
DS
= 0
V
G2S
= ±6 V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.5V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
V
DS
= 4 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
3SK296
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
20
V
G2S
= 3 V
1.2 V
Pulse test
Channel Power Dissipation Pch (mW)
200
Drain current I
D
(mA)
16
1.0 V
12
0.8 V
8
0.6 V
4
V
G1S
= 0.4 V
2
4
6
8
10
150
100
50
0
50
100
150
200
0
Ambient Temperature
Ta (°C)
Drain to source voltage V
DS
(V)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
V
DS
= 6 V
Drain Current vs. Gate2 to Source Voltage
20
2.0 V
V
DS
= 6 V
Pulse test
Drain current I
D
(mA)
16
2.5 V
1.5 V
Pulse test
Drain current I
D
(mA)
2.0 V
1.5 V
16
1.0 V
12
12
8
1.0 V
4
V
G2S
= 0.5 V
0
1
2
3
4
5
8
V
G1S
= 0.5 V
4
0
1
2
3
4
5
Gate1 to source voltage V
G1S
(V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Gate2 to source voltage V
G2S
(V)
Power Gain vs. Drain Current
25
Forward transfer admittance
|y
fs
| (mS)
30
V
DS
= 6 V
f = 1 kHz
V
G2S
= 3.0 V
18
2.5 V
2.0 V
1.5 V
6
0.5 V
0
0.4
0.8
1.2
1.6
2.0
1.0 V
24
Power gain PG (dB)
20
15
12
10
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
2
5
10
20
5
0
1
Gate1 to source voltage V
G1S
(V)
Drain current I
D
(mA)
Rev.3.00 Aug 10, 2005 page 3 of 7
3SK296
Noise Figure vs. Drain Current
5
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
25
NF (dB)
PG (dB)
Power gain
4
20
3
15
Noise figure
2
10
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
0
1
5
2
5
10
20
0
Drain current
I
D
(mA)
Drain to source voltage VDS (V)
Noise Figure vs. Drain to Source Voltage
5
NF (dB)
Noise figure
4
3
2
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
0
Drain to source voltage
V
DS
(V)
Rev.3.00 Aug 10, 2005 page 4 of 7
3SK296
S11 Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10
−10
−.2
−5
−4
−3
−.4
−.6
−.8
−1
−1.5
−2
180°
150°
1
1.5
2
S21 Parameter vs. Frequency
90°
120°
Scale: 0.5 / div.
60°
30°
0°
−150°
−30°
−120°
−60°
−90°
Condition: V
DS
= 4 V , V
G2S
= 3 V
I
D
= 10 mA , Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Condition: V
DS
= 4 V , V
G2S
= 3 V
I
D
= 10 mA , Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
Scale: 0.002/ div.
60°
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10
−10
−.2
−150°
−30°
−.4
−120°
−60°
−90°
−.6
−.8
−1
−1.5
−2
−5
−4
−3
Condition: V
DS
= 4 V , V
G2S
= 3 V
I
D
= 10 mA , Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Condition: V
DS
= 4 V , V
G2S
= 3 V
I
D
= 10 mA , Zo = 50
Ω
100 to 1000 MHz (50 MHz step)
Rev.3.00 Aug 10, 2005 page 5 of 7
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