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3SK300ZR-TL-E

Description
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size150KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

3SK300ZR-TL-E Overview

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300ZR-TL-E Parametric

Parameter NameAttribute value
Parts packaging codeSC-61AA
package instructionLEAD FREE, SC-61AA, MPAK-4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage14 V
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
REJ03G0818-0300
(Previous ADE-208-449A)
Rev.3.00
Aug.10.2005
Features
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
1. Source
2. Gate1
3. Gate2
4. Drain
3
1
4
Note:
Marking is “ZR–“
Rev.3.00 Aug 10, 2005 page 1 of 6

3SK300ZR-TL-E Related Products

3SK300ZR-TL-E 3SK300
Description Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
package instruction LEAD FREE, SC-61AA, MPAK-4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 14 V 14 V
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 12 dB 12 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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