3SK317 datasheet, PDF - EEWORLD Datasheet

3SK317: DescriptionSilicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier; CategoryDiscrete semiconductor The transistor; File Size68KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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3SK317 Overview

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Parameter Name	Attribute value
package instruction	CMPAK-4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	14 V
Maximum drain current (Abs) (ID)	0.025 A
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W
Minimum power gain (Gp)	24 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

3SK317

Silicon N-Channel Dual Gate MOS FET

UHF / VHF RF Amplifier

REJ03G1247-0200

(Previous: ADE-208-778)

Rev.2.00

Aug. 10, 2005

Features

•

Low noise characteristics;

(NF = 1.0 dB typ. at f = 200 MHz)

•

High power gain characteristics;

(PG = 27.6 dB typ. at f = 200 MHz)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

Note:

Marking is “ZR-“.

Rev.2.00

Aug 10, 2005,

page 1 of 6

	3SK317	3SK317ZR-TL-E
Description	Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier	Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
package instruction	CMPAK-4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	compli	unknow
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	14 V	14 V
Maximum drain current (Abs) (ID)	0.025 A	0.025 A
Maximum drain current (ID)	0.025 A	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W	0.1 W
Minimum power gain (Gp)	24 dB	12 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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