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3SK317ZR-TL-E

Description
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size68KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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3SK317ZR-TL-E Overview

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317ZR-TL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-82A
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage14 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
REJ03G1247-0200
(Previous: ADE-208-778)
Rev.2.00
Aug. 10, 2005
Features
Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
High power gain characteristics;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “ZR-“.
Rev.2.00
Aug 10, 2005,
page 1 of 6

3SK317ZR-TL-E Related Products

3SK317ZR-TL-E 3SK317
Description Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
package instruction SMALL OUTLINE, R-PDSO-G4 CMPAK-4
Contacts 4 4
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 14 V 14 V
Maximum drain current (Abs) (ID) 0.025 A 0.025 A
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.1 W 0.1 W
Minimum power gain (Gp) 12 dB 24 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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