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R2J20601NP

Description
Driver - MOS FET Integrated SiP (DrMOS)
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size150KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

R2J20601NP Overview

Driver - MOS FET Integrated SiP (DrMOS)

R2J20601NP Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeQFN
package instruction8 X 8 MM, 0.80 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, PLASTIC, QFN-56
Contacts56
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW SIDE GATE SUPPLY VOLTAGE ALSO 5 V TO 12 V
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeS-PQCC-N56
JESD-609 codee0
length8 mm
Number of functions1
Number of terminals56
Nominal output peak current35 A
Package body materialPLASTIC/EPOXY
encapsulated codeHVQCCN
Package shapeSQUARE
Package formCHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height0.8 mm
Maximum supply voltage5.25 V
Minimum supply voltage4.75 V
Nominal supply voltage5 V
Supply voltage 1-max16 V
Supply voltage1-Nom12 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
R2J20601NP
Driver – MOS FET Integrated SiP (DrMOS)
REJ03G0237-0700
Rev.7.00
Jun 30, 2008
Description
The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the
package standard “Driver – MOS FET integrated SiP (DrMOS)” proposed by Intel Corporation.
Features
Built-in power MOS FET suitable for applications with 12 V input and low output voltage
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 16 V max
High-frequency operation (above 1 MHz) possible
Large average output current (35 A)
Achieve low power dissipation (About 5.6 W at 1 MHz, 25 A)
Controllable driver: Remote on/off
Built-in Schottky diode for bootstrapping
Low-side drive voltage can be independently set
Small package: QFN56 (8 mm
×
8 mm
×
0.8 mm)
Pb-free
Outline
VCIN BOOT
GH
VIN
56
Reg5V
Driver
Tab
High-side MOS
Tab
1
14
15
DISBL#
MOS FET Driver
VSWH
Low-side MOS Tab
PWM
43
CGND VLDRV
GL
PGND
42
28
29
(Bottom view)
QFN56 package 8 mm
×
8 mm
REJ03G0237-0700 Rev.7.00 Jun 30, 2008
Page 1 of 13

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Description Driver - MOS FET Integrated SiP (DrMOS) Driver - MOS FET Integrated SiP (DrMOS)

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