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MURC120BB

Description
200V, SILICON, SIGNAL DIODE, DIE-1
CategoryDiscrete semiconductor    diode   
File Size310KB,5 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

MURC120BB Overview

200V, SILICON, SIGNAL DIODE, DIE-1

MURC120BB Parametric

Parameter NameAttribute value
package instructionS-XUUC-N1
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.71 V
JESD-30 codeS-XUUC-N1
Maximum non-repetitive peak forward current35 A
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
MURC105-MURC160
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Rectified Forward
Current(Square Wave
Mounting Method #3 Per
Note1)
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
Operating Junction
Temperature and Storage
Temperature
Symbol
V
RWM
I
F(AV)
MURC
105
50
MURC
110
100
MURC
115
150
MURC
120
200
MURC
130
300
MURC
140
400
MURC
150
500
MURC
160
600
Unit
V
A
1.0 @ T
A
= 130C
1.0 @ T
A
= 120C
I
FSM
35
A
T
J,
T
stg
-65 to +175
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(Note1)
Symbol
V
F
MURC
105
MURC
110
MURC
115
MURC
120
MURC
130
MURC
140
MURC
150
MURC
160
Unit
V
(I
F
= 1.0 Amp, T
J
= 150
C)
(I
F
= 1.0 Amp, T
J
= 25
C)
Max. Reverse Current (Note1)
(Rated DC Voltage, T
J
= 150
C)
(Rated DC Voltage, T
J
= 25
C)
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/s)
(I
F
= 0.5 Amp, I
R
= 1.0 A,
I
REC
=0.25A)
0.710
0.875
I
R
50
2.0
t
rr
35
25
30
1.05
1.25
A
150
5.0
nS
75
50
10
pF
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max Forward Recovery Time
T
fr
(I
F
= 1.0 Amp, di/dt = 50 A/s,
I
REC
to 1.0V)
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%
25
50
nS
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
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