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RQK0608BQDQSTL-E

Description
Silicon N Channel MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size111KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RQK0608BQDQSTL-E Overview

Silicon N Channel MOS FET Power Switching

RQK0608BQDQSTL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)3.2 A
Maximum drain current (ID)3.2 A
Maximum drain-source on-resistance0.195 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
RQK0608BQDQS
Silicon N Channel MOS FET
Power Switching
REJ03G1621-0100
Rev.1.00
Mar 03, 2008
Features
Low on-resistance
R
DS(on)
= 120 mΩ typ.(at V
GS
= 4.5 V, I
D
= 1.6 A)
Low drive current
High speed switching
V
DSS
: 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
R
)
2, 4
D
2
3
1G
4
S
3
1
1. Gate
2. Drain
3. Source
4. Drain
Note:
Marking is “BQ“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
±12
3.2
10
3.2
1.5
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
10
µs,
Duty cycle
1%
2. When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 1 of 7

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