TBB1002 datasheet, PDF - EEWORLD Datasheet

TBB1002: DescriptionTwin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier; CategoryDiscrete semiconductor The transistor; File Size94KB，10 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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TBB1002 Overview

Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	PLASTIC, CMPAK-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	COMPLEX
Minimum drain-source breakdown voltage	6 V
Maximum drain current (Abs) (ID)	0.021 A
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W
Minimum power gain (Gp)	16 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

TBB1002

Twin Built in Biasing Circuit MOS FET IC

VHF/UHF RF Amplifier

REJ03G0841-0900

Rev.9.00

Aug 22, 2006

Features

•

Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Suitable for World Standard Tuner RF amplifier.

Very useful for total tuner cost reduction.

Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,

Rs = 0 conditions.

•

Provide mini mold packages; CMPAK-6

Outline

RENESAS Package code: PTSP0006JA-A

(Package name: CMPAK-6)

1. Gate-1(1)

2. Source

3. Drain(1)

4. Drain(2)

5. Gate-2

6. Gate-1(2)

Notes:

1. Marking is “BM”.

2. TBB1002 is individual type number of RENESAS TWIN BBFET.

Rev.9.00 Aug 22, 2006 page 1 of 9

	TBB1002	TBB1002BMTL-E	TBB1002_06
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	-
package instruction	PLASTIC, CMPAK-6	SMALL OUTLINE, R-PDSO-G6	-
Contacts	6	6	-
Reach Compliance Code	compli	unknow	-
ECCN code	EAR99	EAR99	-
Configuration	COMPLEX	COMPLEX	-
Minimum drain-source breakdown voltage	6 V	6 V	-
Maximum drain current (Abs) (ID)	0.021 A	0.03 A	-
Maximum drain current (ID)	0.03 A	0.03 A	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF	-
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	-
JESD-30 code	R-PDSO-G6	R-PDSO-G6	-
Number of components	2	2	-
Number of terminals	6	6	-
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.25 W	0.25 W	-
Minimum power gain (Gp)	16 dB	16 dB	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-
transistor applications	AMPLIFIER	AMPLIFIER	-
Transistor component materials	SILICON	SILICON	-

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