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TBB1002_06

Description
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size94KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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TBB1002_06 Overview

Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

TBB1002
Twin Built in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
REJ03G0841-0900
Rev.9.00
Aug 22, 2006
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Provide mini mold packages; CMPAK-6
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
6
5
4
2
1
3
1. Gate-1(1)
2. Source
3. Drain(1)
4. Drain(2)
5. Gate-2
6. Gate-1(2)
Notes:
1. Marking is “BM”.
2. TBB1002 is individual type number of RENESAS TWIN BBFET.
Rev.9.00 Aug 22, 2006 page 1 of 9

TBB1002_06 Related Products

TBB1002_06 TBB1002 TBB1002BMTL-E
Description Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Maker - Renesas Electronics Corporation Renesas Electronics Corporation
package instruction - PLASTIC, CMPAK-6 SMALL OUTLINE, R-PDSO-G6
Contacts - 6 6
Reach Compliance Code - compli unknow
ECCN code - EAR99 EAR99
Configuration - COMPLEX COMPLEX
Minimum drain-source breakdown voltage - 6 V 6 V
Maximum drain current (Abs) (ID) - 0.021 A 0.03 A
Maximum drain current (ID) - 0.03 A 0.03 A
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) - 0.04 pF 0.04 pF
highest frequency band - ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code - R-PDSO-G6 R-PDSO-G6
Number of components - 2 2
Number of terminals - 6 6
Operating mode - DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 0.25 W 0.25 W
Minimum power gain (Gp) - 16 dB 16 dB
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
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