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TBB1004DMTL-E

Description
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size93KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

TBB1004DMTL-E Overview

Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

TBB1004DMTL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMPLEX
Minimum drain-source breakdown voltage6 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Minimum power gain (Gp)16 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
TBB1004
Twin Built in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
REJ03G0842-1100
Rev.11.00
Aug 22, 2006
Features
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
Suitable for World Standard Tuner RF amplifier.
Very useful for total tuner cost reduction.
Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-6
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
6
5
4
2
1
3
1. Drain(1)
2. Source
3. Gate-1(1)
4. Gate-1(2)
5. Gate-2
6. Drain(2)
Notes:
1. Marking is “DM”.
2. TBB1004 is individual type number of RENESAS TWIN BBFET.
Rev.11.00 Aug 22, 2006 page 1 of 9

TBB1004DMTL-E Related Products

TBB1004DMTL-E TBB1004 TBB1004_06
Description Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Maker Renesas Electronics Corporation Renesas Electronics Corporation -
package instruction SMALL OUTLINE, R-PDSO-G6 PLASTIC, CMPAK-6 -
Contacts 6 6 -
Reach Compliance Code unknow compli -
ECCN code EAR99 EAR99 -
Configuration COMPLEX COMPLEX -
Minimum drain-source breakdown voltage 6 V 6 V -
Maximum drain current (Abs) (ID) 0.03 A 0.021 A -
Maximum drain current (ID) 0.03 A 0.03 A -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF -
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND -
JESD-30 code R-PDSO-G6 R-PDSO-G6 -
Number of components 2 2 -
Number of terminals 6 6 -
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 0.25 W 0.25 W -
Minimum power gain (Gp) 16 dB 16 dB -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
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