FS100KMJ-03F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0253-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
V
DSS
: 30 V
r
DS(ON) (max)
: 4.0 mΩ
I
D
: 100 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
TO-220FN
2
1
1. Gate
2. Drain
3. Source
1
2
3
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
Viso
—
Ratings
30
±20
100
400
100
100
400
30
– 55 to +150
– 55 to +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 10
µH
AC 1 minute,
Terminal to case
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FS100KMJ-03F
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Rth(ch-c)
t
rr
Min.
30
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
1.5
3.1
4.2
0.16
120
7600
2300
1000
30
170
520
290
1.0
—
80
Max.
—
—
100
±10
2.0
4.0
5.7
0.20
—
—
—
—
—
—
—
—
1.5
4.17
—
Unit
V
V
µA
µA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
I
D
= 1 mA, V
GS
= 0 V
I
G
=
±100 µA,
V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 50 A, V
GS
= 10 V
I
D
= 50 A, V
GS
= 4 V
I
D
= 50 A, V
GS
= 10 V
I
D
= 50 A, V
DS
= 10 V
V
DS
= 10 V, V
GS
= 0 V,
f = 1MHz
V
DD
= 15 V, I
D
= 50 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= 50 A, V
GS
= 0 V
Channel to case
I
S
= 50 A, dis/dt = – 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FS100KMJ-03F
Performance Curves
Drain Power Dissipation Derating Curve
50
Maximum Safe Operating Area
5
3
2
tw = 10µs
100µs
1ms
10ms
100ms
Drain Power Dissipation P
D
(W)
30
20
10
0
0
Drain Current I
D
(A)
40
10
7
5
3
2
10
7
5
3
2
2
1
50
100
150
200
10
7
Tc = 25°C
5
Single Pulse
3
0
2 3 5 710 2 3
0
DC
5 7 10
1
2 3
5 7
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
100
80
60
3V
V
GS
= 10V
6V
5V
4V
Output Characteristics (Typical)
50
40
30
20
10
Tc = 25°C
Pulse Test
V
GS
= 10V
6V
5V
4V
3V
Drain Current I
D
(A)
40
P
D
= 30W
20
Tc = 25°C
Pulse Test
Drain Current I
D
(A)
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.1
0.2
0.3
0.4
0.5
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Resistance r
DS(ON)
(mΩ)
Drain-Source On-State Voltage V
DS(ON)
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
1.0
0.8
0.6
0.4
0.2
50A
Tc = 25°C
Pulse Test
On-State Resistance vs.
Drain Current (Typical)
10
Tc = 25°C
Pulse Test
8
6
4
2
0
0
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 710
V
GS
= 4V
10V
I
D
= 100A
70A
0
0
2
4
6
8
10
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.1.00, Aug.20.2004, page 3 of 6
FS100KMJ-03F
Forward Transfer Admittance vs.
Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
10
3
7
5
3
2
10
7
5
3
2
10
7
5
3
2
10
0 0
10
2 3
5 7 10
1
2 3
5 7 10
2
1
2
Transfer Characteristics (Typical)
100
80
60
40
20
0
0
Tc = 25°C
V
DS
= 10V
Pulse Test
V
DS
= 10V
Pulse Test
Tc = 25°C
Drain Current I
D
(A)
75°C
125°C
2
4
6
8
10
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
10
4
7
5
10
3
7
5
Drain Current I
D
(A)
Switching Characteristics (Typical)
td(off)
tf
Ciss
Capacitance (pF)
3
2
10
7
5
3
Tch = 25°C
2
f = 1MHz
3
Switching Time (ns)
Coss
Crss
3
2
tr
10
7
5
td(on)
2
3
2
Tch = 25°C, V = 15V
DD
10
1 0
10
V
GS
= 10V, R
GEN
= R
GS
= 50Ω
10
2 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
V
GS
= 0V
2 3
5 7 10
1
2 3
5 7 10
2
Drain-Source Voltage V
DS
(V)
Drain Current I
D
(A)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
I
D
= 100A
Source-Drain Diode Forward
Characteristics (Typical)
100
80
60
40
25°C
V
GS
= 0V
Pulse Test
Tc = 125°C
Gate-Source Voltage V
GS
(V)
6
4
2
0
0
Source Current I
S
(A)
8
V
DS
= 15V
20V
25V
75°C
20
0
0
40
80
120
160
200
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.1.00, Aug.20.2004, page 4 of 6
FS100KMJ-03F
On-State Resistance vs.
Channel Temperature (Typical)
10
7
V
GS
= 10V
I
D
= 50A
5
Pulse Test
3
2
10
0
7
5
3
2
10
–1
–50
0
50
100
150
1
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
3.2
2.4
1.6
0.8
0
V
DS
= 10V
I
D
= 1mA
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
= 0V
I
D
= 1mA
Transient Thermal Impedance Characteristics
10
1
7
D = 1.0
5
3
0.5
2
10
0
7
5
3
2
10
–1
7
5
3
2
0.2
0.1
0.05
0.02
P
DM
0.01
Single Pulse
tw
T
–50
0
50
100
150
10
–2 –4
10 2 3 5 7 10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 710
0
2 3 5 7 10
1
2 3 5 710
2
D = tw
T
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
D.U.T.
R
L
Vin
Vout
R
GS
V
DD
Vout
Monitor
Switching Waveform
90%
R
GEN
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
京公网安备 11010802033920号
EEWORLD
