EEWORLDEEWORLDEEWORLD

Part Number

Search

FS100KMJ-03F-A8

Description
High-Speed Switching Use Nch Power MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size96KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

FS100KMJ-03F-A8 Overview

High-Speed Switching Use Nch Power MOS FET

FS100KMJ-03F-A8 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeTO-220AB
package instructionTO-220FN, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0057 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FS100KMJ-03F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0253-0100
Rev.1.00
Aug.20.2004
Features
Drive voltage : 4 V
V
DSS
: 30 V
r
DS(ON) (max)
: 4.0 mΩ
I
D
: 100 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
TO-220FN
2
1
1. Gate
2. Drain
3. Source
1
2
3
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
Viso
Ratings
30
±20
100
400
100
100
400
30
– 55 to +150
– 55 to +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 10
µH
AC 1 minute,
Terminal to case
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6

FS100KMJ-03F-A8 Related Products

FS100KMJ-03F-A8 FS100KMJ-03F
Description High-Speed Switching Use Nch Power MOS FET High-Speed Switching Use Nch Power MOS FET
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code TO-220AB TO-220AB
package instruction TO-220FN, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 100 A 100 A
Maximum drain current (ID) 100 A 100 A
Maximum drain-source on-resistance 0.0057 Ω 0.0057 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 30 W 30 W
Maximum pulsed drain current (IDM) 400 A 400 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
Design a temperature acquisition system for a greenhouse
The temperature is measured every 10 minutes, and the data is collected continuously for 24 hours. The data is stored in the memory. Every 24 hours, the data is output to the level recorder and the te...
詹慧娟 Test/Measurement
Analysis of the development trends of several major semiconductor industry centers in China
DIGITIMES Research pointed out that in 2010, the output value of the mainland's semiconductor industry exceeded RMB 150 billion, a 28% increase over 2009, and the total number of companies exceeded 70...
小赛跑跑 Industrial Control Electronics
05.26【Daily Question】Which infinite loop do you like best?
Infinite loops are probably the most common when we write bare metal programs, so let's discuss the problem of infinite loops. Let's use C language instead of assembly language to talk about the most ...
wanghongyang Integrated technical exchanges
【Classic Show】Resistors and transistors make a constant current source
[i=s]This post was last edited by dontium on 2015-1-23 13:26[/i] Before the invention of the op amp, this was a commonly used constant current source circuit. The most typical application is the linea...
常见泽1 Analogue and Mixed Signal
Research on the soft switching technology of push-pull commutation with split inductor
Abstract: An inductor split push-pull commutation soft switching circuit is proposed. The working principle of the circuit and the conditions for realizing soft switching are analyzed. The simulation ...
zbz0529 PCB Design
The Space Devices Department of Microwave Devices and Technology Research and Development Center was established
On the morning of May 9, 2006, the inauguration meeting of the Space Devices Department of the Microwave Devices and Technology Research and Development Center was held in the center's conference room...
JasonYoo RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2111  291  1187  553  1284  43  6  24  12  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号