FS50ASJ-03F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0238-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive Voltage : 4V
V
DSS
: 30 V
r
DS(ON) (max)
: 12.2 mΩ
I
D
: 50 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
MP-3A
2, 4
4
1
12
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulse)
Avalanche current (Pulse)
Source current
Source current (Pulse)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
—
Ratings
30
±20
50
200
50
50
200
50
– 55 to + 150
– 55 to + 150
0.32
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 6
µH
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FS50ASJ-03F
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Diode reverse recovery time
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Rth(ch-c)
t
rr
Min.
30
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
1.5
9.2
13
0.23
45
2100
690
340
16
90
130
85
1.0
—
50
Max.
—
—
100
±10
2.0
12.2
19
0.31
—
—
—
—
—
—
—
—
1.5
2.5
—
Unit
V
V
µA
µA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
I
D
= 1 mA, V
GS
= 0 V
I
G
=
±100 µA,
V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
I
D
= 25 A, V
GS
= 4 V
I
D
= 25 A, V
GS
= 10 V
I
D
= 25 A, V
DS
= 10 V
V
DS
= 10 V, V
GS
= 0 V,
f = 1MHz
V
DD
= 15 V, I
D
= 25 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= 25 A, V
GS
= 0 V
Channel to case
I
S
= 25 A, dis/dt = – 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FS50ASJ-03F
Performance Curves
Drain Power Dissipation Derating Curve
100
Maximum Safe Operating Area
3
2
Drain Power Dissipation P
D
(W)
tw = 10µs
60
Drain Current I
D
(A)
80
10
2
7
5
3
2
10
1
7
5
3
2
Tc = 25°C
Single Pulse
10
0
3 5 7 10
0
2 3
100µs
1ms
10ms
DC
5 7 10
1
2 3
57
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
100
Output Characteristics (Typical)
50
Drain Current I
D
(A)
Drain Current I
D
(A)
80
V
GS
= 10V
6V
5V
Tc = 25°C
Pulse Test
4V
Tc = 25°C
Pulse Test
V
GS
= 10V
6V
5V
4V
P
D
= 50W
40
60
30
3V
20
40
3V
20
P
D
= 50W
10
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
Drain-Source On-State Resistance r
DS(ON)
(mΩ)
On-State Voltage vs.
Gate-Source Voltage (Typical)
5.0
On-State Resistance vs.
Drain Current (Typical)
50
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
40
4.0
3.0
30
V
GS
= 4V
2.0
20
1.0
I
D
= 80A
50A
30A
10
10V
0
0
2
4
6
8
10
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.1.00, Aug.20.2004, page 3 of 6
FS50ASJ-03F
Forward Transfer Admittance vs.
Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0 0
10
2
3 4 5 7 10
1
2 3 4 5 7 10
2
Transfer Characteristics (Typical)
100
Drain Current I
D
(A)
80
Tc = 25°C
V
DS
= 10V
Pulse Test
V
DS
= 10V
Pulse Test
Tc = 25°C
60
75°C
125°C
40
20
0
0
2
4
6
8
10
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
10
4
7
5
Drain Current I
D
(A)
Switching Characteristics (Typical)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
Tch = 25°C
f = 1MHz
V
GS
= 0V
Ciss
3
2
10
3
7
5
3
2
Switching Time (ns)
Capacitance (pF)
Tch = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
td(off)
tf
Coss
Crss
tr
td(on)
10
2
10
–1
2 3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2
3 4 5 7 10
1
2 3 4 5 7 10
2
Drain-Source Voltage V
DS
(V)
Drain Current I
D
(A)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Source-Drain Diode Forward
Characteristics (Typical)
100
Gate-Source Voltage V
GS
(V)
Tch = 25°C
I
D
= 50A
V
GS
= 0V
Pulse Test
8
Source Current I
S
(A)
80
6
V
DS
= 10V
20V
25V
60
4
40
Tc = 125°C
75°C
25°C
2
20
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.1.00, Aug.20.2004, page 4 of 6
FS50ASJ-03F
On-State Resistance vs.
Channel Temperature (Typical)
10
1
7
V
GS
= 10V
I = 2A
5
D
4
Pulse Test
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
V
DS
= 10V
I
D
= 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
10
1
7
5
3
D = 1.0
2
0.5
10
0
0.2
7
5
0.1
3
2
10
–1
7
5
3
2
V
GS
= 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
tw
D=
T
0.4
–50
0
50
100
150
10
–2 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
D.U.T.
R
L
Vin
Vout
R
GS
V
DD
Vout
Monitor
Switching Waveform
90%
R
GEN
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
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