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FS50ASJ-03F-T13

Description
High-Speed Switching Use Nch Power MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size97KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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FS50ASJ-03F-T13 Overview

High-Speed Switching Use Nch Power MOS FET

FS50ASJ-03F-T13 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionMP-3A, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.019 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FS50ASJ-03F
High-Speed Switching Use
Nch Power MOS FET
REJ03G0238-0100
Rev.1.00
Aug.20.2004
Features
Drive Voltage : 4V
V
DSS
: 30 V
r
DS(ON) (max)
: 12.2 mΩ
I
D
: 50 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
MP-3A
2, 4
4
1
12
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulse)
Avalanche current (Pulse)
Source current
Source current (Pulse)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
Ratings
30
±20
50
200
50
50
200
50
– 55 to + 150
– 55 to + 150
0.32
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 6
µH
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6

FS50ASJ-03F-T13 Related Products

FS50ASJ-03F-T13 FS50ASJ-03F
Description High-Speed Switching Use Nch Power MOS FET High-Speed Switching Use Nch Power MOS FET
Maker Renesas Electronics Corporation Renesas Electronics Corporation
package instruction MP-3A, 3 PIN SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 50 A 50 A
Maximum drain current (ID) 50 A 50 A
Maximum drain-source on-resistance 0.019 Ω 0.019 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W
Maximum pulsed drain current (IDM) 200 A 200 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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