FS70UMJ-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G1435-0200
(Previous: MEJ02G0072-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
V
DSS
: 100 V
r
DS(ON) (max)
: 17 mΩ
I
D
: 70 A
Integrated Fast Recovery Diode (TYP.) : 115 ns
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1
1.
2.
3.
4.
Gate
Drain
Source
Drain
1
2
3
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
—
Ratings
100
±20
70
280
70
70
280
125
– 55 to +150
– 55 to +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 100
µH
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6
FS70UMJ-2
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
r
DS(ON)
r
DS(ON)
V
DS(ON)
| y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
R
th(ch-c)
t
rr
Min
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.5
13
14
0.46
68
8200
1150
600
54
140
830
350
1.0
—
115
Max
—
±0.1
0.1
2.0
17
18
0.60
—
—
—
—
—
—
—
—
1.5
1.00
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 100 V, V
GS
= 0 V
I
D
= 1 mA, V
DS
= 10 V
I
D
= 35 A, V
GS
= 10 V
I
D
= 35 A, V
GS
= 4 V
I
D
= 35 A, V
GS
= 10 V
I
D
= 35 A, V
DS
= 10 V
V
DS
= 10 V, V
GS
= 0 V,
f = 1MHz
V
DD
= 50 V, I
D
= 35 A,
V
GS
= 10 V,
R
GEN
= R
GS
= 50
Ω
I
S
= 35 A, V
GS
= 0 V
Channel to case
I
S
= 70 A, d
is
/d
t
= –100 A/µs
Rev.2.00
Aug 07, 2006
page 2 of 6
FS70UMJ-2
Performance Curves
Power Dissipation Derating Curve
200
3
2
Maximum Safe Operating Area
tw = 10µs
Power Dissipation P
D
(W)
Drain Current I
D
(A)
160
120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
100µs
1ms
80
40
Tc = 25°C
Single Pulse
DC
0
0
50
100
150
200
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
100
50
Output Characteristics (Typical)
Tc = 25°C
Pulse Test
3.5V
Tc = 25°C
Pulse Test
P
D
= 125W
Drain Current I
D
(A)
Drain Current I
D
(A)
80
V
GS
= 10V
6V
5V
4V
3V
40
60
30
V
GS
= 10V
5V
4V
3V
40
20
2.5V
20
10
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
Gate-Source Voltage V
GS
(V)
Drain-Source Voltage V
DS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
Drain-Source On-State Resistance r
DS(ON)
(mΩ)
On-State Voltage vs.
Gate-Source Voltage (Typical)
2.0
Tc = 25°C
Pulse Test
On-State Resistance vs.
Drain Current (Typical)
20
Tc = 25°C
Pulse Test
16
V
GS
= 4V
1.6
1.2
I
D
= 100A
70A
12
10V
0.8
8
0.4
30A
4
0
0
0
2
4
6
8
10
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00
Aug 07, 2006
page 3 of 6
FS70UMJ-2
Forward Transfer Admittance vs.
Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
10
2
7
V
DS
= 10V
Pulse Test
5
4
3
2
10
1
7
5
4
3
2
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
T
C
= 25°C
75°C
125°C
Transfer Characteristics (Typical)
100
Drain Current I
D
(A)
80
Tc = 25°C
V
DS
= 10V
Pulse Test
60
40
20
0
0
2
4
6
8
10
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
Drain Current I
D
(A)
Switching Characteristics (Typical)
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1 0
10
2 3 4 5 7 10
1
Tch = 25°C
V
DD
= 50V
V
GS
= 10V
RGEN = RGS = 50Ω
t
d(off)
t
f
t
r
t
d(on)
Capacitance C (pF)
Ciss
Coss
Crss
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
Switching Time (ns)
Tch = 25°C
f = 1MHz
V
GS
= 0V
2 3 4 5 7 10
2
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
100
Drain Current I
D
(A)
Source-Drain Diode Forward
Characteristics (Typical)
V
GS
= 0V
Pulse Test
Gate-Source Voltage V
GS
(V)
8
Source Current I
S
(A)
Tch = 25°C
I
D
= 70A
80
6
60
4
V
DS
= 20V
50V
80V
40
Tc = 125°C
75°C
25°C
2
20
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.2.00
Aug 07, 2006
page 4 of 6
FS70UMJ-2
On-State Resistance vs.
Channel Temperature (Typical)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
Drain-Source On-State Resistance r
DS(ON)
(25°C)
Gate-Source Threshold Voltage V
GS(th)
(V)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
V
GS
= 10V
I
D
= 35A
Pulse Test
V
DS
= 10V
I
D
= 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
Transient Thermal Impedance Characteristics
10
1
7
5
3
2
10
0
7
0.5
5
3
0.2
2
0.1
10
–1
7
5
3
2
D = 1.0
V
GS
= 0V
I
D
= 1mA
1.2
1.0
0.8
P
DM
tw
0.6
0.05
0.02
0.01
Single Pulse
T
D
=
tw
T
0.4
–50
0
50
100
150
10
–2 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Vin Monitor
D.U.T.
R
L
Vin
Vout
R
GS
V
DD
Vout
Monitor
Switching Waveform
90%
R
GEN
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.2.00
Aug 07, 2006
page 5 of 6
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