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FS70UMJ-2-A8

Description
High-Speed Switching Use Nch Power MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size167KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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FS70UMJ-2-A8 Overview

High-Speed Switching Use Nch Power MOS FET

FS70UMJ-2-A8 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FS70UMJ-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G1435-0200
(Previous: MEJ02G0072-0101)
Rev.2.00
Aug 07, 2006
Features
Drive voltage : 4 V
V
DSS
: 100 V
r
DS(ON) (max)
: 17 mΩ
I
D
: 70 A
Integrated Fast Recovery Diode (TYP.) : 115 ns
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1
1.
2.
3.
4.
Gate
Drain
Source
Drain
1
2
3
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
Ratings
100
±20
70
280
70
70
280
125
– 55 to +150
– 55 to +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Conditions
V
GS
= 0 V
V
DS
= 0 V
L = 100
µH
Typical value
Rev.2.00
Aug 07, 2006
page 1 of 6

FS70UMJ-2-A8 Related Products

FS70UMJ-2-A8 FS70UMJ-2
Description High-Speed Switching Use Nch Power MOS FET High-Speed Switching Use Nch Power MOS FET
Maker Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code TO-220AB TO-220AB
package instruction TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 70 A 70 A
Maximum drain-source on-resistance 0.018 Ω 0.018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 280 A 280 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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