H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1121-0700
(Previous: ADE-208-1516E)
Rev.7.00
Apr 07, 2006
Features
•
Low on-resistance
R
DS (on)
= 4.6 mΩ typ.
•
Low drive current
•
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N0307LD
H7N0307LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N0307LM
Rev.7.00 Apr 07, 2006 page 1 of 7
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
30
±20
60
240
60
90
1.39
89
150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C/W
°C
°C
Pch
θ
ch-c
Note 2
θ
ch-a
Tch
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
3. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
30
±20
—
—
1.0
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.6
8.0
65
2500
650
350
40
7
8
20
300
70
20
0.92
60
Max
—
—
±10
10
2.5
5.8
11.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Note 3
I
D
= 1 mA, V
DS
= 10 V
I
D
= 30 A, V
GS
= 10 V
Note 3
I
D
= 30 A, V
GS
= 4.5 V
I
D
= 30 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 10 V
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A
R
L
= 0.33
Ω
Rg = 4.7
Ω
I
F
= 60 A, V
GS
= 0
I
F
= 60 A, V
GS
= 0
di
F
/dt = 50 A/µs
Note 3
Note 3
Rev.7.00 Apr 07, 2006 page 2 of 7
H7N0307LD, H7N0307LS, H7N0307LM
Main Characteristics
Power vs. Temperature Derating
160
500
Maximum Safe Operation Area
10
1m
DC
10
Pch (W)
120
(A)
100
s 100
µ
s
µ
s
Channel Dissipation
Drain Current
80
Op
PW
er
ati
=
10
on
m
I
D
s
1
40
Operation in
this area is
limited by R
DS (on)
Tc = 25°C
1 shot Pulse
0.3
1
3
10
30
100
0.1
0
0
50
100
150
200
0.01
0.1
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
10 V
4.5 V
50
3.5 V
Pulse Test
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
40
I
D
(A)
Drain Current
40
30
30
25°C
Tc = 75°C
10
–25°C
Drain Current
20
3V
20
10
V
GS
= 2.5 V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage
V
DS(on)
(V)
0.20
Pulse Test
0.16
Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
Pulse Test
50
0.12
20
10
5
10 V
2
1
0.1 0.2 0.5 1
V
GS
= 4.5 V
0.08
I
D
= 10 A
0.04
5A
2A
0
0
4
8
12
16
20
2
5 10 20
50 100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.7.00 Apr 07, 2006 page 3 of 7
H7N0307LD, H7N0307LS, H7N0307LM
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
20
Pulse Test
16
I
D
= 2 A, 5 A, 10 A
12
V
GS
= 4.5 V
8
2 A, 5 A, 10 A
10 V
0
–40
0
40
80
120
160
100
30
10
25°C
3
1
0.3
0.1
0.1
Tc = –25°C
75°C
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
4
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
Coss
300
Crss
100
30
10
Ciss
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
500
200
100
50
20
10
0.1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
(V)
I
D
= 60 A
40
V
GS
16
V
DD
= 25 V
10 V 12
5V
8
Switching Characteristics
V
GS
(V)
20
500
50
V
DS
Switching Time t (ns)
200
100
50
td(on)
20
tf
10
5
0.1 0.2 0.5 1
td(off)
tr
Drain to Source Voltage
30
V
DS
20
10
0
0
20
V
DD
= 25 V
10 V
5V
40
60
80
4
Gate to Source Voltage
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
2
5 10 20
50 100
0
100
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.7.00 Apr 07, 2006 page 4 of 7
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current vs.
Souece to Drain Voltage
100
Reverse Drain Current I
DR
(A)
80
10 V
60
5V
V
GS
= 0
40
20
Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 1.38
°
C/W, Tc = 25
°
C
P
DM
PW
T
0.05
0.02
0.03
1
e
0.0
puls
t
ho
1s
100
µ
D=
PW
T
0.01
10
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
D.U.T.
Rg
R
L
Vout
Monitor
Vin
Vout
10%
10%
90%
10%
Vin
10 V
V
DS
= 10 V
td(on)
90%
tr
90%
td(off)
tf
Rev.7.00 Apr 07, 2006 page 5 of 7
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