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H7N0307LD

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size90KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

H7N0307LD Overview

Silicon N Channel MOS FET High Speed Power Switching

H7N0307LD Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.0115 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1121-0700
(Previous: ADE-208-1516E)
Rev.7.00
Apr 07, 2006
Features
Low on-resistance
R
DS (on)
= 4.6 mΩ typ.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N0307LD
H7N0307LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N0307LM
Rev.7.00 Apr 07, 2006 page 1 of 7

H7N0307LD Related Products

H7N0307LD H7N0307LD-E H7N0307LM H7N0307LS H7N0307LMTL-E H7N0307LSTL-E
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
package instruction IN-LINE, R-PSIP-T3 LDPAK-3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 LDPAK-3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 4 3 3 3 3
Reach Compliance Code unknow compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N N
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V
Maximum drain current (ID) 60 A 60 A 60 A 60 A 60 A 60 A
Maximum drain-source on-resistance 0.0115 Ω 0.0115 Ω 0.0115 Ω 0.0115 Ω 0.0115 Ω 0.0115 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1
Number of terminals 3 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A 240 A 240 A 240 A 240 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
Is it lead-free? Contains lead - - Contains lead Lead free Lead free
Is it Rohs certified? incompatible conform to - incompatible conform to conform to
JESD-609 code e0 e6 - e0 e6 e6
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 250
Terminal surface TIN LEAD TIN BISMUTH - TIN LEAD TIN BISMUTH TIN BISMUTH
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum drain current (Abs) (ID) - 60 A 60 A 60 A 60 A 60 A
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum power dissipation(Abs) - 90 W 90 W 90 W 90 W 90 W
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