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BB302M

Description
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size289KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

BB302M Overview

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

BB302M Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSOT-143
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Minimum power gain (Gp)22 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BB302M
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0825-0400
(Previous ADE-208-572B)
Rev.4.00
Aug.10.2005
Features
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “BW –”.
2. BB302M is individual type number of RENESAS BBFET.
Rev.4.00 Aug 10, 2005 page 1 of 9

BB302M Related Products

BB302M BB302MBW-TL-E
Description Built in Biasing Circuit MOS FET IC VHF RF Amplifier Built in Biasing Circuit MOS FET IC VHF RF Amplifier
Parts packaging code SOT-143 SOT-143
package instruction SMALL OUTLINE, R-PDSO-G4 LEAD FREE, MINIMOLD, SC-61AA, SOT-143RMOD, MPAK-4
Contacts 4 4
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (ID) 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 22 dB 22 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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