BB302M
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0825-0400
(Previous ADE-208-572B)
Rev.4.00
Aug.10.2005
Features
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
•
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
•
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “BW –”.
2. BB302M is individual type number of RENESAS BBFET.
Rev.4.00 Aug 10, 2005 page 1 of 9
BB302M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
|y
fs
|
Ciss
Coss
Crss
PG
NF
Min
12
+10
±10
—
—
0.4
0.4
9
15
2.2
0.8
—
22
—
Typ
—
—
—
—
—
—
—
13
20
3.0
1.1
0.017
26
1.7
Max
—
—
—
+100
±100
1.0
1.0
18
—
4.0
1.5
0.04
—
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200
µA,
V
G1S
= V
G2S
= 0
I
G1
= +10
µA,
V
G2S
= V
DS
= 0
I
G2
= ±10
µA,
V
G1S
= V
DS
= 0
V
G1S
= +9 V, V
G2S
= V
DS
= 0
V
G2S
= ±9 V, V
G1S
= V
DS
= 0
V
DS
= 9 V, V
G2S
= 6 V
I
D
= 100
µA
V
DS
= 9 V, V
G1S
= 9 V
I
D
= 100
µA
V
DS
= 9 V, V
G1
= 9 V
V
G2S
= 6 V, R
G
= 120 kΩ
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 120 kΩ, f = 1 kHz
V
DS
= 9 V, V
G1
= 9 V
V
G2S
= 6 V, R
G
= 120 kΩ
f = 1 MHz
V
DS
= 9 V, V
G1
= 9 V, V
G2S
= 6 V
R
G
= 120 kΩ, f = 200 MHz
Rev.4.00 Aug 10, 2005 page 2 of 9
BB302M
Main Characteristics
Test Circuit for Operating Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Gate 1
R
G
V
G1
Drain
A
I
D
Source
Application Circuit
V
AGC
= 6 to 0.3 V
BBFET
V
DS
= 9 V
RFC
Output
Input
R
G
V
GG
= 9 V
Rev.4.00 Aug 10, 2005 page 3 of 9
BB302M
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
200
25
56
k
68
Ω
82
k
Ω
k
Ω
Typical Output Characteristics
150
Drain Current I
D
(mA)
20
V
G2S
= 6 V
V
G1
= V
15
100
10
50
k
Ω
1
k
Ω
0
12
k
Ω
0
15
k
Ω
180
k
Ω
220
00
0 k
Ω
5
27
R
G
=
0
50
100
150
200
0
2
4
6
8
10
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs.
Gate2 to Source Voltage
25
k
Ω
56
Drain Current vs. Gate1 Voltage
20
V
DS
= 9 V
R
G
= 100 k
Ω
6V
5V
4V
3V
2V
8
68 k
Ω
Drain Current I
D
(mA)
15
100 k
Ω
Drain Current I
D
(mA)
20
82 k
Ω
16
120 k
Ω
10
150 k
Ω
180 k
Ω
200 k
Ω
12
5
R
G
= 220 k
Ω
V
DS
= V
G1
= 9 V
1.2
2.4
3.8
4.8
6.0
4
V
G2S
= 1 V
0
0
2
4
6
8
10
Gate2 to Source Voltage V
G2S
(V)
Gate1 Voltage V
G1
(V)
Drain Current vs. Gate1 Voltege
20
V
DS
= 9 V
R
G
= 120 kΩ
6V
5V
4V
20
Drain Current vs. Gate1 Voltege
V
DS
= 9 V
R
G
= 150 kΩ
6V
5V
4V
3V
2V
V
G2S
= 1 V
Drain Current I
D
(mA)
12
Drain Current I
D
(mA)
16
16
12
8
2V
4
3V
8
V
G2S
= 1 V
4
0
2
4
6
8
10
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Rev.4.00 Aug 10, 2005 page 4 of 9
BB302M
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
Forward Transfer Admittance |y
fs
| (mS)
25
V
DS
= 9 V
R
G
= 100 kΩ
f = 1 kHz
6V
5V
4V
3V
25
V
DS
= 9 V
R
G
= 120 kΩ
f = 1 kHz
6V
5V
4V
3V
20
20
15
15
10
2V
V
G2S
= 1 V
0
2
4
6
8
10
10
2V
5
5
V
G2S
= 1 V
0
2
4
6
8
10
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
Forward Transfer Admittance |y
fs
| (mS)
25
V
DS
= 9 V
R
G
= 150 kΩ
f = 1 kHz
Power Gain PG (dB)
20
6V 5V 4V
3V
25
20
15
10
5
0
10
15
2V
10
5
V
G2S
= 1 V
0
2
4
6
8
10
V
DS
= 9 V
V
G1
= 9 V
V
G2S
= 6 V
f = 200 MHz
20
50
100 200
500 1000
Gate1 Voltage V
G1
(V)
Gate Resistance R
G
(kΩ)
Noise Figure vs. Gate Resistance
4
V
DS
= 9 V
V
G1
= 9 V
V
G2S
= 6 V
f = 200 MHz
30
25
Power Gain vs. Drain Current
Noise Figure NF (dB)
3
Power Gain PG (dB)
20
15
10
5
V
DS
= 9 V
V
G1
= 9 V
V
G2S
= 6 V
R
G
= variable
f = 200 MHz
5
10
15
20
25
30
2
1
0
10
20
50
100 200
500 1000
0
Gate Resistance R
G
(kΩ)
Drain Current I
D
(mA)
Rev.4.00 Aug 10, 2005 page 5 of 9
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