BB501C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0830-0600
(Previous ADE-208-701D)
Rev.6.00
Aug.10.2005
Features
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
•
High gain;
PG = 21.5 dB typ. at f = 900 MHz
•
Low noise;
NF = 1.85 dB typ. at f = 900 MHz
•
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
•
Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “AS –”.
2. BB501C is individual type number of RENESAS BBFET.
Rev.6.00 Aug 10, 2005 page 1 of 9
BB501C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
D(op)
|y
fs
|
Ciss
Coss
Crss
PG
NF
Min
6
+6
+6
—
—
0.5
0.5
7
19
1.4
0.7
—
17
—
Typ
—
—
—
—
—
0.7
0.7
10
24
1.7
1.1
0.019
21.5
1.85
Max
—
—
—
+100
+100
1.0
1.0
13
29
2.0
1.5
0.04
—
2.4
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200
µA,
V
G1S
= V
G2S
= 0
I
G1
= +10
µA,
V
G2S
= V
DS
= 0
I
G2
= +10
µA,
V
G1S
= V
DS
= 0
V
G1S
= +5 V, V
G2S
= V
DS
= 0
V
G2S
= +5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G2S
= 4 V
I
D
= 100
µA
V
DS
= 5 V, V
G1S
= 5 V
I
D
= 100
µA
V
DS
= 5 V, V
G1
= 5 V
V
G2S
= 4 V, R
G
= 47 kΩ
V
DS
= 5 V, V
G1
= 5 V, V
G2S
=4 V
R
G
= 47 kΩ, f = 1 kHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
=4 V, R
G
= 47 kΩ
f = 1 MHz
V
DS
= 5 V, V
G1
= 5 V
V
G2S
=4 V, R
G
= 47 kΩ
f = 900 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9
BB501C
Main Characteristics
900MHz Power Gain, Noise Figure Test Circuit
V
G1
V
G2
C4
C5
V
D
C6
R1
R2
C3
G2
R3
D
L3
RFC
Output
L4
Input
L1
L2
G1
S
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
47 kΩ
4.7 kΩ
L1 :
10
10
L2 :
26
3
3
(φ1mm Copper wire)
Unit : mm
8
21
L4 :
29
10
7
10
L3 :
7
18
RFC :
φ1mm
Copper wire with enamel 4turns inside dia 6mm
Rev.6.00 Aug 10, 2005 page 3 of 9
BB501C
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
200
20
V
G2S
= 4 V
V
G1
= V
DS
150
Typical Output Characteristics
Drain Current I
D
(mA)
16
=
22
R
G
k
Ω
12
100
8
50
k
Ω
27
Ω
k
33
k
Ω
39
Ω
k
47
k
Ω
56
k
Ω
68
k
Ω
82
4
100
k
Ω
0
50
100
150
200
0
1
2
3
4
5
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 33 k
Ω
16
4V
3V
2V
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 47 k
Ω
Drain Current I
D
(mA)
16
12
Drain Current I
D
(mA)
12
3V
4V
2V
4
V
G2S
= 1 V
8
8
4
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 68 kΩ
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 33 kΩ
f = 1 kHz
4V
3V
16
24
Drain Current I
D
(mA)
12
18
2V
8
3V
4V
2V
12
4
6
V
G2S
= 1 V
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Gate1 Voltage V
G1
(V)
Rev.6.00 Aug 10, 2005 page 4 of 9
BB501C
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 68 kΩ
f = 1 kHz
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
30
V
DS
= 5 V
R
G
= 47 kΩ
f = 1 kHz
24
4V
3V
24
4V
3V
18
2V
18
2V
12
12
6
V
G2S
= 1 V
6
V
G2S
= 1 V
0
1
2
3
4
5
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
30
4
Noise Figure vs. Gate Resistance
Power Gain PG (dB)
Noise Figure NF (dB)
25
20
15
10
5
0
10
3
2
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
1
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
20
50
100
20
50
100
0
10
Gate Resistance R
G
(kΩ)
Gate Resistance R
G
(kΩ)
Power Gain vs. Drain Current
30
25
4
Noise Figure vs. Drain Current
Noise Figure NF (dB)
Power Gain PG (dB)
3
20
15
10
5
0
0
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
R
G
= variable
f = 900 MHz
2
1
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
R
G
= variable
f = 900 MHz
0
5
10
15
20
0
5
10
15
20
Drain Current I
D
(mA)
Drain Current I
D
(mA)
Rev.6.00 Aug 10, 2005 page 5 of 9
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