BB502CBS-TL-E datasheet, PDF - EEWORLD Datasheet

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BB502CBS-TL-E: DescriptionBuilt in Biasing Circuit MOS FET IC UHF RF Amplifier; CategoryDiscrete semiconductor The transistor; File Size112KB，11 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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BB502CBS-TL-E Overview

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB502CBS-TL-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	SC-82
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (Abs) (ID)	0.02 A
Maximum drain current (ID)	0.02 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W
Minimum power gain (Gp)	17 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	20
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BB502C

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

REJ03G0832-0600

(Previous ADE-208-810C)

Rev.6.00

Apr 27, 2006

Features

•

Built in Biasing Circuit; To reduce using parts cost & PC board space.

Low noise; NF = 1.6 dB typ. at f = 900 MHz

High gain; PG = 22 dB typ. at f = 900 MHz

Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•

Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

Notes:

1. Marking is “BS–”.

2. BB502C is individual type number of RENESAS BBFET.

Rev.6.00 Apr 27, 2006 page 1 of 10

BB502CBS-TL-E Related Products

	BB502CBS-TL-E	BB502C
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	SC-82	SC-82
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	unknow	compli
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V
Maximum drain current (Abs) (ID)	0.02 A	0.02 A
Maximum drain current (ID)	0.02 A	0.02 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF	0.05 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	DUAL GATE, DEPLETION MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W	0.1 W
Minimum power gain (Gp)	17 dB	17 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	20	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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