H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005
Features
•
•
•
•
•
Low on-resistance: R
DS (on)
= 0.48
Ω
typ.
Low leakage current: I
DSS
= 1
µA
max (at V
DS
= 250 V)
High speed switching: t
f
= 11 ns typ (at V
GS
= 10 V, V
DD
= 125 V, I
D
= 3.5 A)
Low gate charge: Qg = 13 nC typ (at V
DD
= 200 V, V
GS
= 10 V, I
D
= 7 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
G
1
2
3
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
H5N2508DL, H5N2508DS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
250
±30
7
28
7
28
7
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
I
DR (pulse)
Note 3
I
AP
Pch
θ
ch-c
Tch
Tstg
Note 1
Note 2
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note:
4. Pulse test
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (off)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
Min
250
—
—
3.0
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.48
5.0
450
60
12
19
14
47
11
13
2.5
6
0.9
100
0.38
Max
—
±0.1
1
4.5
0.63
—
—
—
—
—
—
—
—
—
—
—
1.4
—
—
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 250 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
Note 4
I
D
= 3.5 A, V
GS
= 10 V
I
D
= 3.5 A, V
DS
= 10 V
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Note 4
V
DD
= 125 V, I
D
= 3.5 A
V
GS
= 10 V
R
L
= 35.7
Ω
Rg = 10
Ω
V
DD
= 200 V
V
GS
= 10 V
I
D
= 7 A
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
H5N2508DL, H5N2508DS
Main Characteristics
Power vs. Temperature Derating
Pch (W)
40
100
30
10
s
Maximum Safe Operation Area
I
D
(A)
30
Channel Dissipation
20
Drain Current
=1
10
0m
0
µ
3
s
s(
1s
Op
ho
er
t)
ati
1
on
(T
c=
25
0.3
°C
)
Operation in
DC
10
PW
1m
µ
s
10
0
0
50
100
150
200
0.1 this area is
limited by R
DS(on)
0.03
Ta = 25°C
0.01
1
3
10
30
100
300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
10
10 V
Pulse Test
8V
6V
6
10
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
8
8
6
5.5 V
Drain Current
4
5V
V
GS
= 4.5 V
0
0
4
8
12
16
20
4
Tc = 75°C
25°C
2
2
–25°C
0
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
10
Pulse Test
8
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(Ω)
2
Pulse Test
1
6
I
D
= 7 A
0.5
V
GS
= 10 V
4
2
0.2
3A
1A
0
0
4
8
12
16
20
0.1
0.2
0.5
1
2
5
10
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
H5N2508DL, H5N2508DS
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
2.0
100
50
20
10
5
2
1
0.5
0.2
0.02 0.05 0.1 0.2
75°C
Tc = –25°C
25°C
V
DS
= 10 V
Pulse Test
Pulse Test
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
1.6
1.2
I
D
= 7 A
0.8
3A
0.4
1A
0
–40
0
40
80
120
160
0.5
1
2
5
10
Case Temperature
Tc (°C)
Drain Current
I
D
(A)
Body-Drain Diode Reverse
Recovery Time
1000
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
V
GS
= 0
f = 1 MHz
Ciss
Reverse Recovery Time trr (ns)
500
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
1000
500
200
100
50
20
10
5
Crss
0
20
40
60
80
100
Coss
200
100
50
20
10
0.2
0.5
1
2
5
10
20
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
500
I
D
= 7 A
400
V
DD
= 50 V
100 V
200 V
V
DS
Switching Characteristics
20
1000
V
GS
= 10 V, V
DD
= 125 V
PW = 10
µs,
duty
≤
1 %
R
G
= 10
Ω
100
t
d(off)
t
d(on)
10
t
r
t
f
16
Drain to Source Voltage
300
12
200
8
100
0
0
V
DD
= 200 V
100 V
50 V
4
8
12
16
20
4
0
Gate to Source Voltage
Switching Time t (ns)
V
GS
1
0.2
0.5
1
2
5
10
20
Gate Charge
Qg (nC)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
H5N2508DL, H5N2508DS
Reverse Drain Current vs.
Source to Drain Voltage
10
Gate to Source Cutoff Voltage V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
I
D
= 10 mA
4
1 mA
I
DR
(A)
Pulse Test
8
Reverse Drain Current
6
3
0.1 mA
2
4
10 V
2
5V
V
GS
= 0 V
1
V
DS
= 10 V
0
–50
0
50
100
150
200
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17
°
C/W, Tc = 25
°
C
P
DM
PW
T
1m
10 m
100 m
1
10
0.1
0.1
0.05
0.03
0.02
0.01
e
puls
hot
1s
D=
PW
T
0.01
10
µ
100
µ
Pulse Width
PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
Vout
Monitor
Vin
Vout
V
DD
= 125 V
10%
10%
90%
10%
90%
t
d(on)
t
r
90%
t
d(off)
t
f
Rev.2.00 Sep 07, 2005 page 5 of 7
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