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H5N2508DSTL-E

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size85KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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H5N2508DSTL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

H5N2508DSTL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeDPAK(S)
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Manufacturer packaging codePRSS0004ZD-C4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.63 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005
Features
Low on-resistance: R
DS (on)
= 0.48
typ.
Low leakage current: I
DSS
= 1
µA
max (at V
DS
= 250 V)
High speed switching: t
f
= 11 ns typ (at V
GS
= 10 V, V
DD
= 125 V, I
D
= 3.5 A)
Low gate charge: Qg = 13 nC typ (at V
DD
= 200 V, V
GS
= 10 V, I
D
= 7 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
G
1
2
3
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7

H5N2508DSTL-E Related Products

H5N2508DSTL-E H5N2508DL H5N2508DL-E H5N2508DS
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Is it Rohs certified? conform to incompatible conform to incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 4 3
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V 250 V 250 V
Maximum drain current (ID) 7 A 7 A 7 A 7 A
Maximum drain-source on-resistance 0.63 Ω 0.63 Ω 0.63 Ω 0.63 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code e6 e0 e6 e0
Number of components 1 1 1 1
Number of terminals 2 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 28 A 28 A 28 A 28 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO YES
Terminal surface TIN BISMUTH TIN LEAD TIN BISMUTH TIN LEAD
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 20 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1

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