H5N2513PL-E datasheet, PDF - EEWORLD Datasheet

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H5N2513PL-E: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size69KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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H5N2513PL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

H5N2513PL-E Parametric

Parameter Name	Attribute value
Brand Name	Renesas
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-3PL
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	4
Manufacturer packaging code	PRSS0004ZF-A4
Reach Compliance Code	unknow
ECCN code	EAR99
Factory Lead Time	1 week
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	100 A
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.026 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Maximum pulsed drain current (IDM)	400 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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H5N2513PL

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1243-0100

Rev.1.00

Jul 25, 2008

Features

•

Low on-resistance

•

High speed switching

•

Built-in fast recovery diode

Outline

RENESAS Package code: PRSS0004ZF-A

(Package name: TO-3PL)

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain

peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW

≤

µs,

duty cycle

≤

2. Value at Tc = 25°C

3. STch = 25°C, Tch

≤

150°C

Symbol

DSS

GSS

D (pulse)

Note1

DR (pulse)

Note1

Ratings

250

±30

100

400

100

400

100

625

250

0.5

150

–55 to +150

Unit

°C/W

°C

AP Note3

Pch

Note2

θch-c

Tch

Tstg

Note3

REJ03G1243-0100 Rev.1.00 Jul 25, 2008

Page 1 of 3

Sales Strategic Planning Div.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Notes:

1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes

warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property

rights or any other rights of Renesas or any third party with respect to the information in this document.

2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,

but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.

3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass

destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws

and regulations, and procedures required by such laws and regulations.

4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this

document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,

please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be

disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )

5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a

result of errors or omissions in the information included in this document.

6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability

of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular

application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.

7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications

or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality

and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or

undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall

have no liability for damages arising out of the uses set forth above.

8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:

(1) artificial life support devices or systems

(2) surgical implantations

(3) healthcare intervention (e.g., excision, administration of medication, etc.)

(4) any other purposes that pose a direct threat to human life

Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing

applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all

damages arising out of such applications.

9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,

movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages

arising out of the use of Renesas products beyond such specified ranges.

10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain

rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage

caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and

malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software

alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as

swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.

Renesas shall have no liability for damages arising out of such detachment.

12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.

13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have

any other inquiries.

RENESAS SALES OFFICES

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.

Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology (Shanghai) Co.,

Ltd.

Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120

Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898

Renesas Technology Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2377-3473

Renesas Technology Taiwan Co.,

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145

http://www.renesas.com

Renesas Technology Malaysia Sdn. Bhd

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510

Colophon .7.2

H5N2513PL-E Related Products

	H5N2513PL-E	H5N2513PL
Description	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching

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