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H5N2513PL

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size69KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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H5N2513PL Overview

Silicon N Channel MOS FET High Speed Power Switching

H5N2513PL
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1243-0100
Rev.1.00
Jul 25, 2008
Features
Low on-resistance
High speed switching
Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain
peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note1
Ratings
250
±30
100
400
100
400
100
625
250
0.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
I
AP Note3
E
AR
Pch
Note2
θch-c
Tch
Tstg
Note3
REJ03G1243-0100 Rev.1.00 Jul 25, 2008
Page 1 of 3

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Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
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