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H5N3004P-E

Description
nullSilicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size113KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

H5N3004P-E Overview

nullSilicon N Channel MOS FET High Speed Power Switching

H5N3004P-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts4
Manufacturer packaging codePRSS0004ZE-A4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.093 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
H5N3004P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1111-0100
(Previous: ADE-208-1523)
Rev.1.00
Sep 07, 2005
Features
Low on-resistance
Low leakage current
High speed switching
Low gate charge (Qg)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Rev.1.00 Sep 07, 2005 page 1 of 6

H5N3004P-E Related Products

H5N3004P-E H5N3004P H5N3004P_05
Description nullSilicon N Channel MOS FET High Speed Power Switching nullSilicon N Channel MOS FET High Speed Power Switching nullSilicon N Channel MOS FET High Speed Power Switching
Is it lead-free? Lead free Contains lead -
Is it Rohs certified? conform to incompatible -
Parts packaging code TO-3P TO-3P -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Contacts 4 3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Shell connection DRAIN DRAIN -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 300 V 300 V -
Maximum drain current (Abs) (ID) 25 A 25 A -
Maximum drain current (ID) 25 A 25 A -
Maximum drain-source on-resistance 0.093 Ω 0.093 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
JESD-609 code e2 e0 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 150 W 150 W -
Maximum pulsed drain current (IDM) 100 A 100 A -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface TIN COPPER TIN LEAD -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -
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