H5N3004P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1111-0100
(Previous: ADE-208-1523)
Rev.1.00
Sep 07, 2005
Features
•
•
•
•
•
Low on-resistance
Low leakage current
High speed switching
Low gate charge (Qg)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Rev.1.00 Sep 07, 2005 page 1 of 6
H5N3004P
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note 1
Value
300
±30
25
100
25
100
25
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
I
DR (pulse)
Note 3
I
AP
Pch
θ
ch-c
Tch
Tstg
Note 1
Note 2
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note:
4. Pulse test
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
GS (off)
|y
fs
|
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
Min
300
—
—
3.0
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
―
25
0.076
3600
400
100
50
120
180
90
110
18
55
0.9
250
2.3
Max
—
1
±0.1
4.0
—
0.093
―
―
―
―
—
―
—
—
—
—
1.35
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 300 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
Note 4
I
D
= 12.5 A, V
DS
= 10 V
I
D
= 12.5 A, V
GS
= 10 V
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 12.5 A
R
L
= 12
Ω
V
GS
= 10 V
Rg = 10
Ω
V
DD
= 240 V
V
GS
= 10 V
I
D
= 25 A
I
F
= 25 A, V
GS
= 0
I
F
= 25 A, V
GS
= 0
di
F
/dt = 100 A/µs
Note 4
Rev.1.00 Sep 07, 2005 page 2 of 6
H5N3004P
Main Characteristics
Power vs. Temperature Derating
Pch (W)
200
1000
300
Maximum Safe Operation Area
I
D
(A)
150
100
30
PW
1
10
10
0
µ
s
µ
s
Channel Dissipation
100
50
Drain Current
m
s
=1
DC
0m
Op
s(
10
1s
er
at
ho
ion
t)
(T
3
c=
Operation in
25
°C
1 this area is
)
0.3
0
0
0.1
50
100
150
200
1
limited by R
DS(on)
Ta = 25°C
3
10
30
100
300
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
Pulse Test
10 V
8V
7V
60
6.5 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
80
80
60
6V
Drain Current
40
5.5 V
20
V
GS
= 5 V
0
0
4
8
12
16
20
40
Tc = 75°C
25°C
–25°C
0
0
2
4
6
8
10
20
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
5
Pulse Test
4
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(mΩ)
200
Pulse Test
100
V
GS
= 10 V, 15 V
50
3
I
D
= 25 A
15 A
1
5A
0
0
4
8
12
16
20
2
20
10
1
2
5
10
20
50
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.1.00 Sep 07, 2005 page 3 of 6
H5N3004P
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
200
100
50
20
10
5
2
1
0.5
0.2
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10 20
50 100
75°C
25°C
Tc = –25°C
Pulse Test
V
GS
= 10 V
I
D
= 25 A
15 A
5A
80
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
160
120
40
0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
Drain Current
I
D
(A)
Body-Drain Diode Reverse
Recovery Time
1000
Typical Capacitance vs.
Drain to Source Voltage
50000
20000
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
500
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
10000
5000
2000
1000
500
Coss
200
100
50
Crss
0
25
50
75
100
125
Ciss
200
100
50
20
10
0.1
0.3
1
3
10
30
100
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
500
I
D
= 25 A
400
V
DD
= 50 V
100 V
240 V
V
DS
Switching Characteristics
20
10000
V
GS
= 10 V, V
DD
= 150 V
PW = 10
µs,
duty
≤
1 %
R
G
= 10
Ω
1000
t
d(off)
100
t
f
t
r
16
Drain to Source Voltage
300
12
200
8
Gate to Source Voltage
Switching Time t (ns)
V
GS
t
f
t
d(on)
100
0
0
V
DD
= 240 V
100 V
50 V
40
80
120
160
4
t
r
10
0.1
0.3
1
3
10
30
100
0
200
Gate Charge
Qg (nC)
Drain Current
I
D
(A)
Rev.1.00 Sep 07, 2005 page 4 of 6
H5N3004P
Reverse Drain Current vs.
Source to Drain Voltage
100
Gate to Source Cutoff Voltage V
GS(off)
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
I
DR
(A)
80
V
GS
= 0 V
60
4
I
D
= 10 mA
1 mA
0.1 mA
Reverse Drain Current
3
40
2
20
5V
10 V
Pulse Test
1
V
DS
= 10 V
0
–50
0
50
100
150
200
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.833
°
C/W, Tc = 25
°
C
P
DM
e
uls
0.1
0.1
0.05
D=
PW
T
PW
T
0.03
0.02
1
0.0
1
0.01
10
µ
o
sh
tp
100
µ
1m
10 m
100 m
1
10
Pulse Width
PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
Vout
Monitor
Vin
Vout
V
DD
= 150 V
10%
10%
90%
10%
90%
t
d(on)
t
r
90%
t
d(off)
t
f
Rev.1.00 Sep 07, 2005 page 5 of 6
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