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H7N0405LD-E

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size84KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

H7N0405LD-E Overview

Silicon N Channel MOS FET High Speed Power Switching

H7N0405LD-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.0087 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)80 W
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN BISMUTH
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature20
Transistor component materialsSILICON
Base Number Matches1
H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1367-0100
Rev.1.00
Sep 25, 2006
Features
Low on-resistance
R
DS(on)
= 4.0 mΩ typ.
Low drive current.
Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
1
2
3
2
1. Gate
2. Drain
3. Source
4. Drain
3
H7N0405LD
H7N0405LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N0405LM
Rev.1.00 Sep 25, 2006 page 1 of 7

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