EEWORLDEEWORLDEEWORLD

Part Number

Search

HAT2134H-EL-E

Description
Silicon N Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

HAT2134H-EL-E Overview

Silicon N Channel Power MOS FET Power Switching

HAT2134H-EL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeLFPAK
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts5
Manufacturer packaging codePTZZ0005DA-A5
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.0058 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
HAT2134H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1190-0300
(Previous: ADE-208-1578A)
Rev.3.00
Sep 07, 2005
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS (on)
= 2.3 m
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
4
G
3
12
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Rev.3.00 Sep 07, 2005 page 1 of 3

HAT2134H-EL-E Related Products

HAT2134H-EL-E HAT2134H
Description Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
Maker Renesas Electronics Corporation Renesas Electronics Corporation
package instruction SMALL OUTLINE, R-PSSO-G4 LFPAK-5
Contacts 5 5
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 60 A 60 A
Maximum drain-source on-resistance 0.0058 Ω 0.0058 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Problems with frequency modulation using MAX2607
This is a verification board. The error is because the minimum spacing was changed when making a homemade PCB board. Please don't mind. L3 and L4 should be 120nh in theory, but since they were not ava...
VHDLI2C11 RF/Wirelessly
Job-Seeking English (III): A Complete English Vocabulary on Work Experience
[b][font=宋体][size=14pt]Work experience [/font][font=宋体]Work experience[/font][font=宋体]occupational history [/font][font=宋体]work experience[/font][font=宋体]professional history [/font][font=宋体]professio...
lijiaoeeworld Talking about work
TM4C123GXL remote code update implementation?
It is divided into two parts: 1. The resident program (including main) needs to realize the serial communication function, that is, wait for the PC to send the binary file bin of the user program (inc...
huye566 Microcontroller MCU
Test the blinky program of RL78G14 in CubeSuite+
[align=left]Environment Description: CubeSuite+ [/align][align=left]Hardware: RPB RL78G14 [/align][align=left] [/align][align=left] [/align][align=left] [/align][align=left]Purpose of the experiment: ...
蓝雨夜 Renesas Electronics MCUs
How to view the state machine?
I am new to Verilog. Can you please tell me what tool I can use to view the state machine flow chart I wrote? (For Xilinx chips)...
xiaoxin1 FPGA/CPLD
Recruiting BLE software development engineers (with favorable treatment)
[i=s]This post was last edited by Lazy Cat Love Flying on 2019-4-3 11:08[/i] Statement: I am recruiting for a friend: Due to the expansion of the company's business, we are now recruiting several BLE ...
懒猫爱飞 Talking about work

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1428  2329  295  42  449  29  47  6  1  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号