STP80NF06 - STB80NF06
STW80NF06
N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D
2
PAK/TO-247
STripFET™ II POWER MOSFET
TYPE
STB80NF06
STP80NF06
STW80NF06
s
s
s
s
V
DSS
60 V
60 V
60 V
R
DS(on)
< 0.010
Ω
< 0.010
Ω
< 0.010
Ω
I
D
80 A
80 A
80 A
3
1
2
1
2
3
TYPICAL R
DS
(on) = 0.0065Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
TO-220
3
1
TO-247
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
DC-AC & DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
ORDER CODES
PART NUMBER
STB80NF06T4
STP80NF06
STW80NF06
MARKING
B80NF06
P80NF06
W80NF06
PACKAGE
D
2
PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
March 2004
1/10
STP80NF06 - STB80NF06 - STW80NF06
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(*)
I
D
I
DM
( )
P
TOT
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
60
60
±20
80
80
320
300
2
870
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
(
q
) Pulse width limited by safe operating area
(1) Starting T
j
= 25°C, I
D
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
THERMAL DATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±20V
Min.
60
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40 A
Min.
2
Typ.
3
0.0065
Max.
4
0.010
Unit
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> 2.5 V
,
I
D
=18 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
20
3850
800
250
Max.
Unit
S
pF
pF
pF
2/10
STP80NF06 - STB80NF06 - STW80NF06
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 27V, I
D
= 40A
R
G
= 4.7Ω V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
Min.
Typ.
25
85
115
24
46
150
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
d(off)
t
f
t
c
Parameter
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =44V, I
D
=80A
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
70
25
85
75
110
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, V
GS
= 0
I
SD
= 80A, di/dt = 100A/µs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
80
250
6.4
Test Conditions
Min.
Typ.
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/10
STP80NF06 - STB80NF06 - STW80NF06
Output Characteristics
Tranfer Characteristics
Tranconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STP80NF06 - STB80NF06 - STW80NF06
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
NormalizedBreakdownVoltage vs Temperature
5/10
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