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MT4C8512D18AWC2-6

Description
DRAM, 512KX8, 60ns, CMOS
Categorystorage    storage   
File Size217KB,8 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT4C8512D18AWC2-6 Overview

DRAM, 512KX8, 60ns, CMOS

MT4C8512D18AWC2-6 Parametric

Parameter NameAttribute value
package instructionDIE,
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeX-XUUC-N65
memory density4194304 bit
Memory IC TypeOTHER DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals65
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIE
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationUPPER
Base Number Matches1

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