High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1200
= 50
= 3.5
= 160
V
A
V
ns
D1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 10
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
50
28
150
I
CM
= 60
@0.8 V
CES
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
g
TO-3P (IXGQ)
G
C
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Advantages
Mounting torque
1.13/10 Nm/lb.in.
300
6
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
28N120B
28N120BD1
5.0
25
50
±100
T=125°C
2.9
2.8
3.5
V
µA
µA
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
T
J
= 25°C
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 28A, V
GE
= 15 V
Note 2
© 2003 IXYS All rights reserved
DS99135(12/03)
IXGQ 28N120B
IXGQ 28N120BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Note 2
20
30
2700
170
60
92
I
C
= 28A, V
GE
= 15 V, V
CE
= 0.5 V
CES
17
37
Inductive load, T
J
= 25°C
°
I
C
= 28 A; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 5
Ω
Note 1.
30
20
180
160
2.0
35
28
2.5
250
300
8.0
280
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
320 n s
5.0 mJ
ns
ns
mJ
ns
ns
mJ
0.5 K/W
K/W
TO-3P (IXTQ) Outline
g
fs
C
ies
I
C
= 28A; V
CE
= 10 V,
28N120B
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
f i
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
f i
E
off
R
thJC
R
thCK
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
28N120BD1 180
Inductive load, T
J
= 125°C
°
I
C
= 28A; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 5
Ω
Note 1
0.25
Reverse Diode (FRED)
Symbol
I
F
V
F
I
RM
t
rr
t
rr
R
thJC
Test Conditions
T
C
= 90°C
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
10
2.95
2.0
14
120
40
A
V
V
A
ns
ns
2.5 K/W
I
F
= 10 A, V
GE
= 0 V
I
F
= 10 A, V
GE
= 0 V, T
J
= 125°C
I
F
= 10 A; -di
F
/dt = 400 A/µs, V
R
= 600 V
V
GE
= 0 V; T
J
= 125°C
I
F
= 1 A; -di
F
/dt = 100 A/µs; V
R
= 30 V, V
GE
= 0 V
Notes:
1.
2.
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGQ28N120B
IXGQ 28N120BD1
Fig. 1. Output Characte ristics
@ 25 Deg. C
56
49
42
V
GE
= 15V
13V
11V
270
V
GE
= 17V
240
210
15V
13V
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
I
C
- Amperes
35
28
21
14
7
9V
I
C
- Amperes
180
150
120
90
60
30
7V
9V
11V
7V
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
2
4
6
8
10
12
14
16
18
20
V
C E
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
56
49
42
V
GE
= 15V
13V
11V
1.3
V
GE
= 15V
1.2
V
C E
- Volts
Fig. 4. De pende nce of V
CE(sat)
on
Tem perature
I
C
= 56A
V
C E (sat)
- Normalized
I
C
- Amperes
9V
35
28
21
14
7
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
1.1
1.0
0.9
0.8
0.7
0.6
0
25
50
75
100
125
150
I
C
= 14A
I
C
= 28A
7V
V
CE
- Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
7
T
J
= 25ºC
6
100
90
80
T
J
- Degrees Centigrade
Fig. 6. Input Adm ittance
5
I
C
= 56A
28A
14A
I
C
- Amperes
70
60
50
40
30
T
J
= 125ºC
25ºC
-40ºC
V
C E
- Volts
4
3
20
10
2
6
7
8
9
10
11
12
13
14
15
16
17
0
4
5
6
7
8
9
10
V
G E
- Volts
V
G E
- Volts
© 2003 IXYS All rights reserved
IXGQ28N120B
IXGQ 28N120BD1
Fig. 7. Trans conductance
35
30
25
T
J
= -40ºC
25ºC
125ºC
22
20
18
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
I
C
= 56A
Fig. 8. Dependence of Turn-off
Ene rgy Loss on R
G
E
off
- milliJoules
g
f s
- Siemens
16
14
12
10
8
6
20
15
10
5
I
C
= 28A
4
0
0
10
20
30
40
50
60
70
80
90
100
2
0
10
20
30
40
50
60
I
C
= 14A
70
80
90
100
I
C
- Amperes
Fig. 9. Dependence of Turn-Off
Ene rgy Loss on I
C
20
18
16
R
G
= 5Ω
R
G
= 47Ω
- - - -
V
GE
= 15V
V
CE
= 960V
R
G
- Ohms
Fig. 10. De pende nce of Turn-off
Ene rgy Loss on Tem pe rature
20
18
16
R
G
= 5Ω
R
G
= 47Ω
- - - -
V
GE
= 15V
V
CE
= 960V
I
C
= 56A
E
off
- MilliJoules
14
12
10
8
6
4
2
0
10
E
off
- milliJoules
14
12
10
8
6
4
T
J
= 125ºC
I
C
= 28A
T
J
= 25ºC
2
0
I
C
= 14A
25
35
45
55
65
75
85
95
105 115 125
15
20
25
30
35
40
45
50
55
60
I
C
- Amperes
Fig. 11. Dependence of Turn-off
Sw itching Tim e on R
G
1400
700
T
J
- Degrees Centigrade
Fig. 12. Depe ndence of Turn-off
Sw itching Tim e on I
C
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
Switching Time - nanoseconds
1200
1000
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
600
500
400
300
200
100
0
800
I
C
= 56A
600
I
C
= 14A
I
C
= 28A
T
J
= 25ºC
400
200
0
10
20
30
40
50
60
70
80
90
100
10
15
20
25
30
35
40
45
50
55
60
R
G
- Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
I
C
- Amperes
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGQ 28N120B
IXGQ28N120BD1
Fig. 13. De pende nce of Turn-off
Sw itching Tim e on Te m perature
550
500
15
Fig. 14. Gate Charge
V
CE
= 600V
I
C
= 28A
I
G
= 1
0mA
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
I
C
= 14A
12
450
400
350
300
250
200
150
100
50
25
I
C
= 56A
V
G E
- Volts
9
6
I
C
= 28A
I
C
= 14A
3
0
35
45
55
65
75
85
95
105 115 125
0
10
20
30
40
50
60
70
80
90
100
T
J
- Degrees Centigrade
Q
G
- nanoCoulombs
Fig. 15. Capacitance
10000
f = 1 MHz
C
ies
Capacitance - p F
1000
C
oes
100
C
res
10
0
5
10
15
20
25
30
35
40
V
C E
- Volts
Fig. 16. Maxim um Trans ient Therm al Res istance
1.00
R
(th) J C
- (ºC/W)
0.50
0.10
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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