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IXGQ28N120B

Description
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size507KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXGQ28N120B Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN

IXGQ28N120B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)550 ns
Nominal on time (ton)63 ns
Base Number Matches1
High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1200
= 50
= 3.5
= 160
V
A
V
ns
D1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 10
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
50
28
150
I
CM
= 60
@0.8 V
CES
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
g
TO-3P (IXGQ)
G
C
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Advantages
Mounting torque
1.13/10 Nm/lb.in.
300
6
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
28N120B
28N120BD1
5.0
25
50
±100
T=125°C
2.9
2.8
3.5
V
µA
µA
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
T
J
= 25°C
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 28A, V
GE
= 15 V
Note 2
© 2003 IXYS All rights reserved
DS99135(12/03)

IXGQ28N120B Related Products

IXGQ28N120B IXGQ28N120BD1
Description Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
Is it Rohs certified? conform to conform to
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 50 A 50 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 550 ns 550 ns
Nominal on time (ton) 63 ns 63 ns
Base Number Matches 1 1
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