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IXGT6N170A-TRL

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size202KB,6 Pages
ManufacturerIXYS
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IXGT6N170A-TRL Overview

Insulated Gate Bipolar Transistor,

IXGT6N170A-TRL Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
High Voltage
IGBT
IXGT6N170A
IXGH6N170A
V
CES
=
I
C25
=
V
CE(sat)

t
fi(typ)
=
1700V
6A
7.0V
32ns
TO-268 (IXGT)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
t
SC
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 33
Clamped Inductive Load
Maximum Ratings
1700
1700
± 20
± 30
6
3
14
I
CM
= 12
@ 0.8 • V
CES
10s
75
- 55 ... +150
150
- 55 ... +150
W
C
C
C
°C
°C
Nm/lb.in.
g
g
Advantages
G
V
V
V
V
A
A
A
A
G
C
C
(Tab)
C
= Collector
Tab = Collector
TO-247 (IXGH)
E
C
(Tab)
E
T
J
= 125C, V
CE
= 1200 V, V
GE
= 15 V, R
G
= 33
T
C
= 25°C
G = Gate
E = Emitter
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13/10
4
6
International Standard Packages
High Voltage Package
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250A, V
GE
= 0V
I
C
= 250A, V
CE
= V
GE
V
CE
= 0.8 • V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
= ± 20V
I
C
= I
C110
, V
GE
= 15V, Note 1
T
J
= 125°C
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1700
3.0
5.0
10
500
±100
7.0
5.4
V
V
μA
μA
nA
V
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
© 2015 IXYS CORPORATION, All Rights Reserved
DS98990C(9/15)

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Description Insulated Gate Bipolar Transistor,
Reach Compliance Code unknown
Base Number Matches 1
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