EEWORLDEEWORLDEEWORLD

Part Number

Search

LLSD101C-T

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size586KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

LLSD101C-T Overview

Rectifier Diode,

LLSD101C-T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
JESD-609 codee0
Humidity sensitivity level1
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
LLSD101A
THRU
LLSD101C
Schottky Barrier
Switching Diode
Features
l
l
l
l
Low Reverse Recovery Time
Low Reverse Capacitance
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Mechanical Data
l
Case: MiniMELF, Glass
l
Terminals: Solderable per MIL -STD -202, Method 208
l
Polarity: Indicated by Cathode Band
l
Weight: 0.05 grams ( approx.)
Cathode Mark
MINIMELF
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(Note 1)
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=10us
Power Dissipation(Note 1)
Thermal Resistance(Note 1)
Operation & Storage Temp. Range
Symbol LLSD101A LLSD101B LLSD101C
V
RRM
V
RWM
60V
50V
40V
V
R
V
R(RMS)
I
FM
I
FSM
Pd
R
Tj, T
STG
42V
35V
15mA
50mA
2.0A
DIMENSION
400mW
375K/W
-55 to 150 C
o
C
B
A
28V
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
.20
1.40
MM
MAX
3.60
.40
1.50
NOTE
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol
Peak
LLSD101A
Reverse LLSD101B
I
R M
Current
LLSD101C
LLSD101A
LLSD101B
Forward
LLSD101C
V
FM
Volt. Drop LLSD101A
LLSD101B
LLSD101C
Junction
LLSD101A
Capacitance LLSD101B
Cj
LLSD101C
Reverse Recovery Time
t
rr
Min
Max
200
0.41
0.40
0.39
1.00
0.95
0.90
2.0
2.1
2.2
1.0
Unit
Test Cond.
V
R
=50V
nA V
R
=40V
V
R
=30V
I
F
=1.0mA
I
F
=1.0mA
V I
F
=1.0mA
I
F
= 1 5 m A
I
F
= 1 5 m A
I
F
= 1 5 m A
pF
V
R
=0V, f=1.0MHz
I
F
= I
R
=5mA,
recover to 0.1 I
-----
SUGGESTED SOLDER
PAD LAYOUT
0.105
-----
0.075”
0.030”
-----
-----
ns
R
Note
: 1. Valid provided that electrodes are kept at ambient temperature
Revision: 4
www.mccsemi.com
2 of 3
2006/05/21

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1923  2781  2530  933  2167  39  56  51  19  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号