Ordering number : ENA1212
3LP04CH
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
3LP04CH
Features
•
General-Purpose Switching Device
Applications
1.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
2
✕0.8mm)
Conditions
Ratings
--30
±10
--200
--800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
⏐
yfs
⏐
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=-
-1mA, VGS=0V
VDS=-
-30V, VGS=0V
VGS=±8V, VDS=0V
VDS=-
-10V, ID=--100μA
VDS=-
-10V, ID=--100mA
ID=-
-100mA, VGS=-
-4V
ID=-
-50mA, VGS=-
-2.5V
ID=-
-10mA, VGS=-
-1.5V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
--0.4
190
320
1.8
2.4
4.5
35
7.2
2.1
2.4
3.4
9.0
Ratings
min
--30
--1
±10
--1.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
Marking : WA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52808PE TI IM TC-00001369 No. A1212-1/4
3LP04CH
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=-
-10V, VGS=--4V, ID=--200mA
VDS=-
-10V, VGS=--4V, ID=--200mA
VDS=-
-10V, VGS=--4V, ID=--200mA
IS=--200mA, VGS=0V
Ratings
min
typ
75
170
550
350
0.58
0.17
0.12
-
-0.89
--1.2
max
Unit
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7015A-004
2.9
0.6
Switching Time Test Circuit
VIN
0V
--4V
0.15
VDD= --15V
VIN
3
PW=10μs
D.C.≤1%
0.2
D
0.05
ID= --100mA
RL=150Ω
VOUT
2.8
1.6
G
1
0.95
Rg
0.6
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
P.G
3LP04CH
50Ω
S
0.9
0.2
Rg=5kΩ
--200
ID -- VDS
V
--5.0
V
--4.0
V
--2
.
--
--300
ID -- VGS
5
°
C
Drain Current, ID -- mA
--140
--120
--100
Drain Current, ID -- mA
--200
--6.0
--150
--8.0
V
--80
--60
--40
--20
0
0
VGS=
--1.5
V
--100
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
IT11699
Drain-to-Source Voltage, VDS -- V
10
9
IT11698
7
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25
°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
6
8
7
6
--25
°
C
--50
25
°
C
Ta=
7
5
°
C
ID= --100mA
--50mA
--10mA
5
= --10
.5V, I D
--1
V GS=
mA
4
5
4
3
2
1
0
0
--1
--2
--3
--4
--5
--6
--7
--8
3
50m
I = --
-2.5V, D
-
V GS=
A
2
1
0
--60
mA
=
--100
.0V, I D
--4
V GS=
--40
--20
0
20
40
60
80
100
25
°
C
120
--160
--250
Ta=
-
-2
--180
75
°
C
V
2.0
5V
VDS= --10V
140
160
Gate-to-Source Voltage, VGS -- V
IT11700
Ambient Temperature, Ta --
°C
IT11701
No. A1212-2/4
3LP04CH
1000
⏐
y
fs⏐ -- ID
VDS= --10V
Forward Transfer Admittance,
⏐
y
fs⏐ -- mS
7
5
3
2
--1000
7
5
3
2
--100
7
5
3
2
IS -- VSD
VGS=0V
Ta
100
7
5
3
2
-25
=-
°
C
°
C
75
--10
7
5
3
2
10
--1.0
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Drain Current, ID -- mA
2
5 7--1000
IT11702
100
7
5
0
--0.2
--0.4
--0.6
25
°
C
--0.8
--25
°
C
25
Ta=
75
°
C
°
C
Source Current, IS -- mA
--1.0
--1.2
--1.4
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT11703
VDS= --15V
VGS= --4V
Switching Time, SW Time -- ns
1000
Ciss
Ciss, Coss, Crss -- pF
7
5
td (off)
tf
3
2
3
2
10
7
5
3
Coss
tr
100
7
5
--10
td(on)
2
3
5
7
2
3
5
7
2
Crss
1.0
--100
0
--5
--10
--15
--20
--25
--30
IT11705
Drain Current, ID -- mA
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
IT11704
2
--1.0
7
5
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --200mA
IDP= --800mA
ID=
--200mA
100μs
PW≤10μs
1m
10
s
ms
Drain Current, ID -- A
3
2
--0.1
7
5
3
2
DC
10
op
era
tio
n
0m
s
Operation in this
area is limited by RDS(on).
(Ta
=2
5
°
C)
--0.01
7
5
3
2
0.7
IT11706
--0.001
--0.1
Ta=25
°C
Single pulse
When mounted on ceramic substrate (900mm
2
✕0.8mm)
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
0.8
PD -- Ta
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
Drain-to-Source Voltage, VDS -- V
IT13693
Allowable Power Dissipation, PD -- W
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13694
No. A1212-3/4
3LP04CH
Note on usage : Since the 3LP04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1212-4/4
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