EC4308C datasheet, PDF - EEWORLD Datasheet

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EC4308C: DescriptionP-Channel Silicon MOSFET General-Purpose Switching Device Applications; CategoryDiscrete semiconductor The transistor; File Size50KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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EC4308C Overview

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

EC4308C Parametric

Parameter Name	Attribute value
Parts packaging code	DFN
package instruction	CHIP CARRIER, R-XBCC-N4
Contacts	4
Manufacturer packaging code	ECSP1008-4
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.12 A
Maximum drain current (ID)	0.12 A
Maximum drain-source on-resistance	6.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XBCC-N4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Ordering number : ENA1214

3LP04SS

SANYO Semiconductors

DATA SHEET

P-Channel Silicon MOSFET

3LP04SS

Features

•

General-Purpose Switching Device

Applications

1.5V drive.

Halogen Free compliance.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10μs, duty cycle≤1%

When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm)

Conditions

Ratings

--30

±10

--200

--800

0.15

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

⏐

yfs

⏐

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

Conditions

ID=-

-1mA, VGS=0V

VDS=-

-30V, VGS=0V

VGS=±8V, VDS=0V

VDS=-

-10V, ID=--100μA

VDS=-

-10V, ID=--100mA

ID=-

-100mA, VGS=-

-4V

ID=-

-50mA, VGS=-

-2.5V

ID=-

-10mA, VGS=-

-1.5V

VDS=-

-10V, f=1MHz

VDS=-

-10V, f=1MHz

VDS=-

-10V, f=1MHz

--0.4

190

320

1.8

2.4

4.5

7.2

2.1

2.4

3.4

9.0

Ratings

min

--30

--1

±10

--1.4

typ

max

Unit

μA

Marking : XW

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer' s products or

equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52808PE TI IM TC-00001373 No. A1214-1/4

3LP04SS

Note on usage : Since the 3LP04SS is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

This catalog provides information as of May, 2008. Specifications and information herein are subject

to change without notice.

PS No. A1214-4/4

EC4308C Related Products

	EC4308C	3LP04SS	ENA1042
Description	P-Channel Silicon MOSFET General-Purpose Switching Device Applications	P-Channel Silicon MOSFET General-Purpose Switching Device Applications	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
package instruction	CHIP CARRIER, R-XBCC-N4	SMALL OUTLINE, R-PDSO-F3	-
Contacts	4	3	-
Reach Compliance Code	unknow	unknow	-
ECCN code	EAR99	EAR99	-
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE	-
Minimum drain-source breakdown voltage	60 V	30 V	-
Maximum drain current (Abs) (ID)	0.12 A	0.2 A	-
Maximum drain current (ID)	0.12 A	0.2 A	-
Maximum drain-source on-resistance	6.6 Ω	2.4 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 code	R-XBCC-N4	R-PDSO-F3	-
Number of components	1	1	-
Number of terminals	4	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	UNSPECIFIED	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	CHIP CARRIER	SMALL OUTLINE	-
Polarity/channel type	P-CHANNEL	P-CHANNEL	-
Maximum power dissipation(Abs)	0.15 W	0.15 W	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal form	NO LEAD	FLAT	-
Terminal location	BOTTOM	DUAL	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Base Number Matches	1	1	-

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