TC55VCM208ASTN40 datasheet, PDF

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TC55VCM208ASTN40: Description524,288-WORD BY 8-BIT FULL CMOS STATIC RAM; Categorystorage storage; File Size111KB，12 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC55VCM208ASTN40 Overview

524,288-WORD BY 8-BIT FULL CMOS STATIC RAM

TC55VCM208ASTN40 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP40,.56,20
Contacts	40
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	40 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G40
length	12.4 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	40
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP40,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Minimum standby current	1.5 V
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10 mm

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TC55VCM208ASTN40,55

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

524,288-WORD BY 8-BIT FULL CMOS STATIC RAM

DESCRIPTION

The TC55VCM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by

8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to

3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of

3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7

µA

standby

current (at V

3 V, Ta

25°C, typical) when chip enable (

CE1

) is asserted high or (CE2) is asserted low. There

are three control inputs.

CE1

and CE2 are used to select the device and for data retention control, and output

enable (

) provides fast memory access. This device is well suited to various microprocessor system applications

where high speed, low power and battery backup are required. And, with a guaranteed operating extreme

temperature range of

−40°

to 85°C, the TC55VCM208ASTN can be used in environments exhibiting extreme

temperature conditions. The TC55VCM208ASTN is available in a plastic 40-pin thin-small outline package

(TSOP).

FEATURES

•

Low-power dissipation

Operating: 9 mW/MHz (typical)

Single power supply voltage of 2.3 to 3.6 V

Power down features using

CE1

and CE2

Data retention supply voltage of 1.5 to 3.6 V

Direct TTL compatibility for all inputs and outputs

Wide operating temperature range of

−40°

to 85°C

Standby Current (maximum):

3.6 V

3.0 V

µA

•

Access Times:

TC55VCM208ASTN

Access Time

CE1 Access Time

CE2

Access Time

40 ns

25 ns

55 ns

30 ns

•

Package:

TSOPⅠ40-P-1014-0.50

(Weight:0.30 g typ)

PIN ASSIGNMENT

(TOP VIEW)

40 PIN TSOP

PIN NAMES

A0~A18

Address Inputs

CE1 , CE2

R/W

LB , UB

Chip Enable

Read/Write Control

Output Enable

Data Byte Control

Data Inputs/Outputs

Power

Ground

No Connection

Option

(Normal)

I/O1~I/O16

GND

OP*

: OP pin must be open or connected to GND.

Pin No.

Pin Name

Pin No.

Pin Name

A16

A15

CE1

A14

GND

A13

A12

I/O1

A11

I/O2

I/O3

I/O4

R/W

CE2

I/O5

A18

I/O6

I/O7

I/O8

A10

GND

A17

2003-08-11

1/12

TC55VCM208ASTN40 Related Products

	TC55VCM208ASTN40	TC55VCM208ASTN55
Description	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
Is it Rohs certified?	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	TSOP1	TSOP1
package instruction	TSOP1, TSSOP40,.56,20	TSOP1, TSSOP40,.56,20
Contacts	40	40
Reach Compliance Code	unknow	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	40 ns	55 ns
I/O type	COMMON	COMMON
JESD-30 code	R-PDSO-G40	R-PDSO-G40
length	12.4 mm	12.4 mm
memory density	4194304 bi	4194304 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	8	8
Number of functions	1	1
Number of terminals	40	40
word count	524288 words	524288 words
character code	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	512KX8	512KX8
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP40,.56,20	TSSOP40,.56,20
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Minimum standby current	1.5 V	1.5 V
Maximum slew rate	0.035 mA	0.035 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	10 mm	10 mm

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