BC635/637/639
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CER
Parameter
Collector-Emitter Voltage at R
BE
=1KΩ
: BC635
: BC637
: BC639
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V
CEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
45
60
80
5
1
1.5
100
1
150
-65 ~ 150
V
V
V
V
A
A
mA
W
°C
°C
45
60
100
V
V
V
Value
45
60
100
Units
V
V
V
V
CES
•
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC635
: BC736
: BC639
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: All
: BC635
: BC637/BC639
: All
Test Condition
I
C
=10mA, I
B
=0
Min.
45
60
80
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=5V, I
C
=10mA,
f=50MHz
100
25
40
40
25
0.1
0.1
250
160
0.5
1
V
V
MHz
Typ.
Max.
Units
V
V
V
µA
µA
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BC635/637/639
Typical Characteristics
200
I
B
= 1.8 mA
1000
I
C
[mA], COLLECTOR CURRENT
I
B
= 1.6 mA
160
V
CE
= 2V
I
B
= 1.2 mA
120
I
B
= 1.0 mA
80
h
FE
, DC CURRENT GAIN
50
I
B
= 1.4 mA
100
I
B
= 0.8 mA
I
B
= 0.6 mA
40
I
B
= 0.4 mA
I
B
= 0.2 mA
0
0
10
20
30
40
10
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 10 I
B
1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= 2V
100
0.1
10
V
CE
(sat)
0.01
1
10
100
1000
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f=1MHz
C
ob
[pF], CAPACITANCE
10
1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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Obsolete
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©2000 Fairchild Semiconductor International
Rev. E
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