Preliminary
Datasheet
BCR2PM-14LE
Triac
Low Power Use
Features
I
T (RMS)
: 2 A
V
DRM
: 800 V (Tj = 125°C)
I
FGT I
, I
RGT I
, I
RGT III
: 10 mA
Planar Passivation Type
The product guaranteed maximum junction
temperature 150°C.
R07DS0233EJ0100
Rev.1.00
Jan 05, 2011
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Electric rice cooker, electric pot, and controller for other heater
Precautions on Usage
When the BCR2PM-14LE is used, do not attach the heat radiating fin.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
14
800
700
840
Unit
V
V
V
Condition
Tj = 125C
Tj = 150C
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 1 of 6
BCR2PM-14LE
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
2
10
0.41
1
0.1
6
1
– 40 to +150
– 40 to +150
2.0
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger current
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-a)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.1
—
0.5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
2.1
2.0
2.0
2.0
10
10
10
—
45
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tj = 25C, I
TM
= 3 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note3
commutation voltage
Tj = 150C, V
D
= 1/2 V
DRM
Junction to ambient,
Natural convection
Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 2 of 6
BCR2PM-14LE
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
Tj = 25°C
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
10
Rated Surge On-State Current
Surge On-State Current (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3
5 7 10
1
2 3
5 7 10
2
On-State Current (A)
On-State Voltage (V)
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (II and III)
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
I
FGT I,
I
RGT I,
I
RGT III
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100120 140160
Typical Example
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
P
GM
= 1 W
V
GM
= 6 V
V
GT
P
G(AV)
= 0.1 W
I
GM
= 1 A
I
RGT I
,
I
RGT III
10
–1
7
V
GD
= 0.1 V
5
10
0
2
3
5 710
1
2 3 5 7 10
2
2 3 5 7 10
3
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
Transient Thermal Impedance (°C/W)
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
V
FGT I
, V
RGT I
V
RGT III
(
10
1
–60 –40–20 0 20 40 60 80 100120 140 160
Natural Convection
No Fins
Print Board
t = 1.6 mm
Solder Land :
φ2
mm
)
10
1
2 3 5 710
2
2 3 5 7 10
3
2 3 5 710
4
2 3 5 7 10
5
Junction Temperature (°C)
Conduction Time (Cycles at 60 Hz)
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 3 of 6
BCR2PM-14LE
Preliminary
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural Convection
No Fins
Print Board
t = 1.6 mm
Solder Land :
φ2
mm
Maximum On-State Power Dissipation
1.8
On-State Power Dissipation (W)
1.4
Ambient Temperature (°C)
1.6
360° Conduction
1.2 Resistive,
inductive loads
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
140
120
100
80
60
40
20
0
0
(
)
Curves apply regardless of
conduction angle
Resistive, inductive loads
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
6
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
Holding Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120140 160
Typical Example
Typical Example
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
10
2
7
5
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100120 140 160
Typical Example
Distribution
T
2
+, G–
Latching Current (mA)
3
2
10
7
5
3
2
1
10
0
7
5 T
2
+, G+
3
2
10
–1
T
2
–, G–
40
80
120
160
–40
0
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 4 of 6
BCR2PM-14LE
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 125°C)
160
140
Typical Example
Tj = 125°C
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 150°C)
160
140
Typical Example
Tj = 150°C
100 (%)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)
120
100
80
60
40
20
0
10
0
2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
0
I Quadrant
III Quadrant
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)
100 (%)
120
100
80
60
40
20
0
10
0
2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
0
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
7 Typical Example
5
3
2
10
0
7
5
3
2
10
–1 –1
10
2
Minimum
Characteristics
Value
Gate Trigger Current vs.
Gate Current Pulse Width
100 (%)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
10
0
2 3
5 7 10
1
2 3
5 7 10
2
Typical Example
I
RGT III
III Quadrant
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Conditions
V
D
= 200 V
I
T
= 1 A
τ
= 500
μs
Tj = 125°C
I
FGT I
I
RGT I
I Quadrant
3
5 7 10
0
2 3
5 7 10
1
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6
Ω
6
Ω
6V
V
A
R
G
6V
V
A
R
G
Test Procedure I
6
Ω
Test Procedure II
6V
V
A
R
G
Test Procedure III
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 5 of 6
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