S77R12B datasheet, PDF - EEWORLD Datasheet

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S77R12B: DescriptionSilicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size206KB，4 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S77R12B Overview

Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element

S77R12B Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	compliant
Nominal circuit commutation break time	160 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
JESD-30 code	O-CEDB-N2
JESD-609 code	e0
Maximum leakage current	200 mA
On-state non-repetitive peak current	73000 A
Number of components	1
Number of terminals	2
Maximum on-state current	3250000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	5100 A
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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S77R12B Related Products

	S77R12B	S77R14B	S77R16B	S77R10B
Description	Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element	Silicon Controlled Rectifier, 4800A I(T)RMS, 3060000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element	Silicon Controlled Rectifier, 4800A I(T)RMS, 3060000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element	Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	compliant	compliant	compliant	unknown
Nominal circuit commutation break time	160 µs	200 µs	200 µs	160 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	500 mA	500 mA	500 mA	500 mA
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	200 mA	200 mA	200 mA	200 mA
On-state non-repetitive peak current	73000 A	66500 A	66500 A	73000 A
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum on-state current	3250000 A	3060000 A	3060000 A	3250000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	225
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	5100 A	4800 A	4800 A	5100 A
Off-state repetitive peak voltage	1200 V	1400 V	1600 V	1000 V
Repeated peak reverse voltage	1200 V	1400 V	1600 V	1000 V
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
Is it lead-free?	Contains lead	Contains lead	Contains lead	-
JESD-609 code	e0	e0	e0	-
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	-
Base Number Matches	1	1	1	-

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