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S77R10B

Description
Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size206KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

S77R10B Overview

Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element

S77R10B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
Nominal circuit commutation break time160 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current500 mA
JESD-30 codeO-CEDB-N2
Maximum leakage current200 mA
Humidity sensitivity level1
On-state non-repetitive peak current73000 A
Number of components1
Number of terminals2
Maximum on-state current3250000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current5100 A
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

S77R10B Related Products

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Description Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element Silicon Controlled Rectifier, 5100A I(T)RMS, 3250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element Silicon Controlled Rectifier, 4800A I(T)RMS, 3060000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element Silicon Controlled Rectifier, 4800A I(T)RMS, 3060000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2 DISK BUTTON, O-CEDB-N2
Reach Compliance Code unknown compliant compliant compliant
Nominal circuit commutation break time 160 µs 160 µs 200 µs 200 µs
Configuration SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 500 V/us 500 V/us 500 V/us 500 V/us
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 500 mA 500 mA 500 mA 500 mA
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum leakage current 200 mA 200 mA 200 mA 200 mA
On-state non-repetitive peak current 73000 A 73000 A 66500 A 66500 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum on-state current 3250000 A 3250000 A 3060000 A 3060000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) 225 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 5100 A 5100 A 4800 A 4800 A
Off-state repetitive peak voltage 1000 V 1200 V 1400 V 1600 V
Repeated peak reverse voltage 1000 V 1200 V 1400 V 1600 V
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR
Is it lead-free? - Contains lead Contains lead Contains lead
JESD-609 code - e0 e0 e0
Terminal surface - TIN LEAD TIN LEAD TIN LEAD
Base Number Matches - 1 1 1

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